Substrate stiffness method and resulting devices for layer transfer process

• US 20060211219A1
• Filed: 02/24/2006
• Published: 09/21/2006
• Est. Priority Date: 02/28/2005
• Status: Active Grant

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Kirk, Harry Robert, Sullivan, James Andrew
• Granted Patent: US 8,241,996 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: B81C 1/00357 involving bonding one or several substrates on a non-temporary support, e.g. another substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers

Abstract

A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the face of the donor substrate to a face of the handle substrate. The method includes coupling a backing substrate to the backside of the donor substrate to form a multilayered structure. The backing substrate is adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level. The predetermined level is a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate. The method includes initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region, while the backing substrate remains attached to the donor substrate to maintain at least the suitable deflection characteristic.

Claims

1. A method for manufacturing multi-layered substrates, the method comprising:

providing a handle substrate, the handle substrate having a first deflection characteristic, the handle substrate having a backside and a face;

coupling a backing substrate to the backside of the handle substrate to form a multilayered structure, the backing substrate being adequate to cause the first deflection characteristic of the handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the handle substrate;

providing a donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of material, the thickness of material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the handle substrate, while the backing substrate remains attached with the handle substrate to maintain at least the deflection characteristic; and

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region.

2. The method of claim 1 further comprising removing the backing substrate from the handle substrate to form a resulting multilayered substrate comprising the handle substrate and the thickness of material.

3. The method of claim 1 wherein the handle substrate is selected from quartz or glass.

4. The method of claim 1 wherein the handle substrate comprises a plastic material.

5. The method of claim 1 wherein the handle substrate is selected from a material consisting of a plastic, a polymer, a ceramic, or a composite.

6. The method of claim 1 wherein the handle substrate comprises a metal bearing material.

7. The method of claim 1 wherein the coupling between the backing substrate and the handle substrate is provided using a bonding process.

8. The method of claim 1 wherein the donor substrate comprises a backing member coupled to a backside of the donor substrate, the backing member providing rigidity to the donor substrate.

9. The method of claim 1 wherein the coupling between the backing substrate and the handle substrate is provided using a bonding process, the bonding process being selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

10. The method of claim 1 wherein the handle substrate and the backing substrate comprises a releasable adhesive there between.

11. The method of claim 1 wherein the handle substrate and the backing substrate comprises a temporary adhesive there between.

12. The method of claim 1 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness less than 50 Angstroms.

13. The method of claim 1 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 100 Angstroms.

14. The method of claim 1 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 200 Angstroms.

15. The method of claim 1 wherein the thickness of material is essentially silicon bearing material.

16. The method of claim 1 wherein the thickness of material is selected from Si, SiGe, SiGe alloys, SiC, Group II/VI compounds, and Group III/V compounds.

17. The method of claim 1 further comprising removing the thickness of material entirely from the donor substrate using a propagating cleave front.

18. The method of claim 1 wherein the suitable deflection characteristic is a second deflection characteristic, the second defection characteristic being less than the first deflection characteristic.

19. The method of claim 1 wherein the backing substrate comprises a silicon wafer.

20. The method of claim 1 wherein the backing substrate comprises a quartz wafer.

21. The method of claim 1 wherein the backing substrate is characterized by a third deflection characteristic, the third deflection characteristic being less than the first deflection characteristic, the third deflection characteristic causing the suitable deflection characteristic, the suitable deflection characteristic being less in magnitude than the first deflection characteristic.

22. The method of claim 1 wherein the handle substrate is quartz or glass, the quartz or glass having a thickness of about 1 millimeter and less.

23. The method of claim 1 wherein the donor substrate comprises a silicon bearing material, the thickness of material being substantially single crystal silicon.

24. The method of claim 1 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

25. The method of claim 1 wherein the backing substrate is maintained on the handle substrate.

26. A method for manufacturing multi-layered substrates, the method comprising:

providing a donor substrate, the donor substrate having a first deflection characteristic, the donor substrate having a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face;

coupling a backing substrate to the backside of the donor substrate to form a multilayered structure, the backing substrate being adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for the thickness of material to be transferred onto a face of a handle substrate while the backing substrate remains intact to the donor substrate to maintain at least the suitable deflection characteristic;

bonding the face of the donor substrate to a face of the handle substrate;

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region.

27. The method of claim 26 further comprising removing the backing substrate from a remaining portion of the donor substrate.

28. The method of claim 26 wherein the handle substrate is selected from quartz or glass.

29. The method of claim 26 wherein the handle substrate comprises a plastic material.

30. The method of claim 26 wherein the handle substrate is selected from a material consisting of a plastic, a polymer, a ceramic, or a composite.

31. The method of claim 26 wherein the handle substrate comprises a metal bearing material.

32. The method of claim 26 wherein the coupling between the backing substrate and the donor substrate is provided using a bonding process.

33. The method of claim 26 wherein the handle substrate comprises a backing member coupled to a backside of the handle substrate, the backing member providing rigidity to the handle substrate.

34. The method of claim 26 wherein the coupling between the backing substrate and the donor substrate is provided using a bonding process, the bonding process being selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

35. The method of claim 26 wherein the donor substrate and the backing substrate comprises a releasable adhesive there between.

36. The method of claim 26 wherein the donor substrate and the backing substrate comprises a temporary adhesive there between.

37. The method of claim 26 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness less than 50 Angstroms.

38. The method of claim 26 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 100 Angstroms.

39. The method of claim 26 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 200 Angstroms.

40. The method of claim 26 wherein the thickness of material is essentially silicon bearing material.

41. The method of claim 26 wherein the thickness of material is selected from Si, SiGe, SiGe alloys, SiC, Group II/VI compounds, and Group III/V compounds.

42. The method of claim 26 further comprising removing the thickness of material entirely from the donor substrate using a propagating cleave front.

43. The method of claim 26 wherein the suitable deflection characteristic is a second deflection characteristic, the second defection characteristic being less than the first deflection characteristic.

44. The method of claim 26 wherein the backing substrate comprises a silicon wafer.

45. The method of claim 26 wherein the backing substrate comprises a quartz wafer.

46. The method of claim 26 wherein the backing substrate is characterized by a third deflection characteristic, the third deflection characteristic being less than the first deflection characteristic.

47. The method of claim 26 wherein the handle substrate is quartz or glass, the quartz or glass having a thickness of about 1 millimeter and less.

48. The method of claim 26 wherein the donor substrate comprises a silicon bearing material, the thickness of material being substantially single crystal silicon.

49. The method of claim 26 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

50. The method of claim 26 wherein the backing substrate is maintained on the donor substrate.

51. A method for manufacturing multi-layered substrates, the method comprising:

providing a donor substrate, the donor substrate having a first deflection characteristic, the donor substrate having a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face;

bonding the face of the donor substrate to a face of the handle substrate;

coupling a backing substrate to the backside of the donor substrate to form a multilayered structure, the backing substrate being adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate;

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region, while the backing substrate remains intact to the donor substrate to maintain at least the suitable deflection characteristic.

52. The method of claim 51 further comprising removing the backing substrate from a remaining portion of the donor substrate.

53. The method of claim 51 wherein the handle substrate is selected from quartz or glass.

54. The method of claim 51 wherein the handle substrate comprises a plastic material.

55. The method of claim 51 wherein the handle substrate is selected from a material consisting of a plastic, a polymer, a ceramic, or a composite.

56. The method of claim 51 wherein the handle substrate comprises a metal bearing material.

57. The method of claim 51 wherein the coupling between the backing substrate and the donor substrate is provided using a bonding process.

58. The method of claim 51 wherein the handle substrate comprises a backing member coupled to a backside of the handle substrate, the backing member providing rigidity to the handle substrate.

59. The method of claim 51 wherein the coupling between the backing substrate and the donor substrate is provided using a bonding process, the bonding process being selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

60. The method of claim 51 wherein the donor substrate and the backing substrate comprises a releasable adhesive there between.

61. The method of claim 51 wherein the donor substrate and the backing substrate comprises a temporary adhesive there between.

62. The method of claim 51 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 50 Angstroms.

63. The method of claim 51 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 100 Angstroms.

64. The method of claim 51 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 200 Angstroms.

65. The method of claim 51 wherein the thickness of material is essentially silicon bearing material.

66. The method of claim 51 wherein the thickness of material is selected from Si, SiGe, SiGe alloys, SiC, Group II/VI compounds, and Group III/V compounds.

67. The method of claim 51 further comprising removing the thickness of material entirely from the donor substrate using a propagating cleave front.

68. The method of claim 51 wherein the suitable deflection characteristic is a second deflection characteristic, the second defection characteristic being less than the first deflection characteristic.

69. The method of claim 51 wherein the backing substrate comprises a silicon wafer.

70. The method of claim 51 wherein the backing substrate comprises a quartz wafer.

71. The method of claim 51 wherein the backing substrate is characterized by a third deflection characteristic, the third deflection characteristic being less than the first deflection characteristic.

72. The method of claim 51 wherein the handle substrate is quartz or glass, the quartz or glass having a thickness of about 1 millimeters and less.

73. The method of claim 51 wherein the donor substrate comprises a silicon bearing material, the thickness of material being substantially single crystal silicon.

74. The method of claim 51 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

75. The method of claim 51 wherein the backing substrate is maintained on the donor substrate.

76. A method for manufacturing multi-layered substrates, the method comprising:

providing a handle substrate, the handle substrate having a first deflection characteristic, the handle substrate having a backside and a face;

providing a donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define a thickness of material, the thickness of material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the handle substrate;

coupling a backing substrate to the backside of the handle substrate, the backing substrate being adequate to cause the first deflection characteristic of the handle substrate to be reduced to a predetermined level, the predetermined level being a suitable deflection characteristic for a thickness of material to be transferred onto the face of the handle substrate while the backing substrate remains intact to the handle substrate to maintain at least the suitable deflection characteristic; and

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region.

77. The method of claim 76 further comprising removing the backing substrate from the handle substrate to form a resulting multilayered substrate comprising the handle substrate and the thickness of material.

78. The method of claim 76 wherein the handle substrate is selected from quartz or glass.

79. The method of claim 76 wherein the handle substrate comprises a plastic material.

80. The method of claim 76 wherein the handle substrate is selected from a material consisting of a plastic, a polymer, a ceramic, or a composite.

81. The method of claim 76 wherein the handle substrate comprises a metal bearing material.

82. The method of claim 76 wherein the coupling between the backing substrate and the handle substrate is provided using a bonding process.

83. The method of claim 76 wherein the donor substrate comprises a backing member coupled to a backside of the donor substrate, the backing member providing rigidity to the donor substrate.

84. The method of claim 76 wherein the coupling between the backing substrate and the handle substrate is provided using a bonding process, the bonding process being selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

85. The method of claim 76 wherein the handle substrate and the backing substrate comprises a releasable adhesive there between.

86. The method of claim 76 wherein the handle substrate and the backing substrate comprises a temporary adhesive there between.

87. The method of claim 76 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 50 Angstroms.

88. The method of claim 76 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 100 Angstroms.

89. The method of claim 76 wherein the first deflection characteristic causes the thickness of material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 200 Angstroms.

90. The method of claim 76 wherein the thickness of material is essentially silicon bearing material.

91. The method of claim 76 wherein the thickness of material is selected from Si, SiGe, SiGe alloys, SiC, Group II/VI compounds, and Group III/V compounds.

92. The method of claim 76 further comprising removing the thickness of material entirely from the donor substrate using a propagating cleave front.

93. The method of claim 76 wherein the suitable deflection characteristic is a second deflection characteristic, the second defection characteristic being less than the first deflection characteristic.

94. The method of claim 76 wherein the backing substrate comprises a silicon wafer.

95. The method of claim 76 wherein the backing substrate comprises a quartz wafer.

96. The method of claim 76 wherein the backing substrate is characterized by a third deflection characteristic, the third deflection characteristic being less than the first deflection characteristic.

97. The method of claim 76 wherein the handle substrate is quartz or glass, the quartz or glass having a thickness of about 1 millimeters and less.

98. The method of claim 76 wherein the donor substrate comprises a silicon bearing material, the thickness of material being substantially single crystal silicon.

99. The method of claim 76 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

100. The method of claim 76 wherein the backing substrate is permanently maintained on the handle substrate.

101. A method for manufacturing multi-layered substrates comprising transparent materials, the method comprising:

providing a transparent handle substrate, the transparent handle substrate having a first deflection characteristic, the transparent handle substrate having a backside and a face;

initiating engagement of a backing substrate to the backside of the transparent handle substrate;

attaching the backing substrate to the backside of the transparent handle substrate to firmly engage the backing substrate to the transparent handle substrate to form a multilayered structure, the backing substrate being adequate to provide an effective deflection characteristic of the multilayered structure to be suitable for a thickness of silicon bearing material to be transferred onto the face of the handle substrate;

providing a donor substrate comprising a cleave region, the thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of silicon bearing material, the thickness of silicon bearing material being provided between the cleave region and the surface region;

bonding the surface region of the donor substrate to the face of the transparent handle substrate, while the backing substrate remains attached to the handle substrate to substantially maintain the effective deflection characteristic; and

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of silicon bearing material from the donor substrate at a portion of the cleave region.

102. The method of claim 101 further comprising removing the backing substrate from the transparent handle substrate to form a resulting multilayered substrate comprising the transparent handle substrate and the thickness of silicon bearing material.

103. The method of claim 101 wherein the transparent handle substrate is selected from quartz or glass.

104. The method of claim 101 wherein the transparent handle substrate comprises a plastic material, a polymer, or a composite.

105. The method of claim 101 wherein the engagement between the backing substrate and the handle substrate is provided using a bonding process.

106. The method of claim 105 wherein the bonding process is selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

107. The method of claim 101 wherein the engagement between the backing substrate and the handle substrate is provided using a temporary or releasable adhesive.

108. The method of claim 101 wherein the first deflection characteristic causes the thickness of silicon bearing material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 50 Angstroms or less than 100 Angstroms or less than 200 Angstroms.

109. The method of claim 101 wherein the thickness of silicon bearing material is essentially a single crystal silicon bearing material.

110. The method of claim 101 further comprising removing the thickness of silicon bearing material entirely from the donor substrate using a propagating cleave front to form a cleaved surface from the silicon bearing material, the cleaved surface having a surface roughness of less than 50 Angstroms or less than 100 Angstroms or less than 200 Angstroms.

111. The method of claim 101 wherein the effective deflection characteristic is less than the first deflection characteristic.

112. The method of claim 101 wherein the backing substrate comprises a silicon wafer.

113. The method of claim 101 wherein the backing substrate is characterized by a second deflection characteristic, the second deflection characteristic being less than the first deflection characteristic.

114. The method of claim 101 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

115. The method of claim 101 wherein the first deflection characteristic comprising a first Young'"'"'s modulus and first thickness of the transparent handle substrate.

116. The method of claim 101 wherein the backing substrate is characterized by a second deflection characteristic, the second deflection characteristic comprising a Young'"'"'s modulus and a second thickness of the backing substrate.

117. The method of claim 101 wherein the thickness of silicon bearing material ranges from about 700 microns to about 750 microns.

118. The method of claim 117 wherein the donor substrate is characterized by a diameter of 200 millimeters.

119. The method of claim 101 wherein the thickness of silicon bearing material ranges from about 600 microns to about 700 microns.

120. The method of claim 119 wherein the donor substrate is characterized by a diameter of 150 millimeters.

121. The method of claim 101 wherein the donor substrate comprising a donor Young'"'"'s modulus and a donor thickness.

122. The method of claim 101 wherein the effective deflection characteristic of the multilayered structure is adequate to provide a surface roughness of less than 50 Angstroms of a cleaved surface region of the thickness of silicon bearing material using the controlled cleaving process

123. A method for manufacturing multi-layered substrates comprising transparent materials, the method comprising:

providing a donor substrate comprising a cleave region, a thickness of material, and a surface region, the cleave region being within the donor substrate to define the thickness of silicon bearing material, the thickness of silicon bearing material being provided between the cleave region and the surface region;

providing a transparent handle substrate, the transparent handle substrate having a first deflection characteristic, the transparent handle substrate having a backside and a face;

bonding the surface region of the donor substrate to the face of the transparent handle substrate;

initiating engagement of a backing substrate to the backside of the transparent handle substrate;

attaching the backing substrate to the backside of the transparent handle substrate to firmly engage the backing substrate to the transparent handle substrate to form a multilayered structure, the backing substrate being adequate to provide an effective deflection characteristic of the multilayered structure to be suitable for a thickness of silicon bearing material to be transferred onto the face of the handle substrate; and

initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of silicon bearing material from the donor substrate at a portion of the cleave region.

124. The method of claim 123 further comprising removing the backing substrate from the transparent handle substrate to form a resulting multilayered substrate comprising the transparent handle substrate and the thickness of silicon bearing material.

125. The method of claim 123 wherein the transparent handle substrate is selected from quartz or glass.

126. The method of claim 123 wherein the transparent handle substrate comprises a plastic material, a polymer, or a composite.

127. The method of claim 123 wherein the engagement between the backing substrate and the handle substrate is provided using a bonding process.

128. The method of claim 127 wherein the bonding process is selected from covalent bonding, anodic bonding, chemical bonding, electrostatic bonding, and plasma-activated bonding.

129. The method of claim 123 wherein the engagement between the backing substrate and the handle substrate is provided using a temporary or releasable adhesive.

130. The method of claim 123 wherein the first deflection characteristic causes the thickness of silicon bearing material to be transferred to the handle substrate using the controlled cleaving process with a surface roughness of less than 50 Angstroms or less than 100 Angstroms or less than 200 Angstroms.

131. The method of claim 123 wherein the thickness of silicon bearing material is essentially a single crystal silicon bearing material.

132. The method of claim 123 further comprising removing the thickness of silicon bearing material entirely from the donor substrate using a propagating cleave front to form a cleaved surface from the silicon bearing material, the cleaved surface having a surface roughness of less than 50 Angstroms or less than 100 Angstroms or less than 200 Angstroms.

133. The method of claim 123 wherein the effective deflection characteristic is less than the first deflection characteristic.

134. The method of claim 123 wherein the backing substrate comprises a silicon wafer.

135. The method of claim 123 wherein the backing substrate is characterized by a second deflection characteristic, the second deflection characteristic being less than the first deflection characteristic.

136. The method of claim 123 wherein the controlled cleaving process provides a propagating cleave front within the portion of the cleave region.

137. The method of claim 123 wherein the first deflection characteristic comprising a first Young'"'"'s modulus and first thickness of the transparent handle substrate.

138. The method of claim 123 wherein the backing substrate is characterized by a second deflection characteristic, the second deflection characteristic comprising a Young'"'"'s modulus and a second thickness of the backing substrate.

139. The method of claim 123 wherein the thickness of silicon bearing material ranges from about 700 microns to about 750 microns.

140. The method of claim 139 wherein the donor substrate is characterized by a diameter of 200 millimeters.

141. The method of claim 123 wherein the thickness of silicon bearing material ranges from about 600 microns to about 700 microns.

142. The method of claim 141 wherein the donor substrate is characterized by a diameter of 150 millimeters.

143. The method of claim 123 wherein the donor substrate comprising a donor Young'"'"'s modulus and a donor thickness.

144. The method of claim 123 wherein the effective deflection characteristic of the multilayered structure is adequate to provide a surface roughness of less than 50 Angstroms of a cleaved surface region of the thickness of silicon bearing material using the controlled cleaving process.