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Silicon oxide cap over high dielectric constant films

  • US 20060211259A1
  • Filed: 03/21/2005
  • Published: 09/21/2006
  • Est. Priority Date: 03/21/2005
  • Status: Abandoned Application
First Claim
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1. A method for forming an integrated circuit structure on a semiconductor substrate comprising:

  • depositing a gate dielectric over the semiconductor substrate using an atomic layer deposition process, wherein the gate dielectric comprises a high k material;

    depositing a silicon oxide layer over the gate dielectric material in a rapid thermal chemical vapor deposition process, using SiH4 and N2O as silicon and oxygen source gases, respectively; and

    forming a gate electrode over the silicon oxide layer.

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