Nano wires and method of manufacturing the same

• US 20060212975A1
• Filed: 03/08/2006
• Published: 09/21/2006
• Est. Priority Date: 03/09/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Byoung-Iyong, Lee, Eun-kyung
• Granted Patent: US 7,649,192 B2
• Time in Patent Office: Days
• US Class Current: 438/99
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C30B 11/12 Vaporous components, e.g. vapour-liquid-solid-growth
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: Y10S 977/721 On a silicon substrate
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/768 Helical wire
• CPC Class Codes: Y10S 977/789 in array format
• CPC Class Codes: Y10S 977/81 Of specified metal or metal alloy composition
• CPC Class Codes: Y10S 977/938 Field effect transistors, FETS, with nanowire- or nanotube-channel region

Abstract

Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Claims

1. A method of manufacturing nano wires, the method comprising:

forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate;

forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate;

agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and

growing the nano wires between the catalysts and the silicon substrate using a thermal process.

2. The method of claim 1, wherein the forming of the microgrooves comprises:

forming the microgrooves by oxidizing a surface of the silicon substrate to form a silicon oxide layer; and

exposing the microgrooves by removing the silicon oxide layer.

3. The method of claim 1, wherein the forming of the metal layer comprises coating at least one transition metal.

4. The method of claim 3, wherein the metal layer comprises at least one transition metal selected from the group consisting of Au, Ni, Ti, or Fe.

5. The method of claim 1, wherein the growing of the nano wires comprises forming the nano wires between the catalysts and the silicon substrate by controlling the temperature and atmospheric pressure at which the thermal process is performed.

6. The method of claim 1, wherein the thermal process is performed at a temperature higher than a eutectic temperature of the catalysts and the silicon substrate.

7. The method of claim 1, further comprising forming an oxide layer on sides of the nano wires by performing an oxidation process after forming the nano wires.

8. A nano wire structure comprising:

a substrate having a surface where microgrooves having a plurality of microcavities are formed;

nano wires formed on the substrate from each of the microgrooves; and

a metal catalyst formed on one end of each of the nano wires.

9. The nano wires of claim 8, wherein the microgrooves having the microcavities are formed in a regular arrangement and distribution in the silicon substrate.

10. The nano wires of claim 8, further comprising oxide layers formed on sides of the nano wires.

11. The nano wires of claim 8, wherein the metal catalysts comprise at least one transition metal.

12. The nano wires of claim 11, wherein the metal catalysts comprise at least one transition metal selected from the group consisting Au, Ti, Ni, or Fe.