Substrate processing apparatus

• US 20060213436A1
• Filed: 04/26/2004
• Published: 09/28/2006
• Est. Priority Date: 05/08/2003
• Status: Active Grant

• Current Assignee: Tadahiro Ohmi, Tokyo Electron Limited
• Original Assignee: Tadahire Ohmi
• Inventors: Ohmi, Tadahiro, Hirayama, Masaki
• Granted Patent: US 7,374,620 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.

Claims

1. A substrate processing apparatus comprising:

a processing chamber defined by an outer wall and provided with a holding table for holding a processing substrate,

an exhaust port for exhausting the inside of said processing chamber,

a microwave transmissive window provided on said processing chamber as part of said outer wall so as to face said processing substrate,

a microwave antenna provided on said microwave transmissive window and electrically connected to a microwave power supply,

a plasma gas supply portion for supplying a plasma gas into said processing chamber,

an inner partition wall formed so as to surround said holding table, and

a partition wall attaching portion inserted between said processing chamber and said microwave transmissive window to form part of said outer wall and attached with said inner partition wall,

said inner partition wall dividing a space inside said processing chamber into a first space containing said holding table and a second space defined by said outer wall and said inner partition wall and a gap between said microwave transmissive window and said partition wall attaching portion being exhausted through said second space.

2. A substrate processing apparatus according to claim 1, characterized in that said partition wall attaching portion includes said plasma gas supply portion that supplies said plasma gas to said first space.

3. A substrate processing apparatus according to claim 1, characterized in that said partition wall attaching portion includes a plurality of contact blocks engaging said inner partition wall and said gap is exhausted through a third space formed between said plurality of contact blocks.

4. A substrate processing apparatus according to claim 3, characterized in that part of said plurality of contact blocks are fixing blocks each formed with a screw hole and configured such that said inner partition wall is fixed to said partition wall attaching portion by insertion of screws into said screw holes.

5. A substrate processing apparatus according to claim 3, characterized in that part of said plurality of contact blocks are gas supply blocks each formed with a plasma gas hole serving as a flow path for said plasma gas.

6. A substrate processing apparatus according to claim 5, characterized in that said plasma gas holes communicate with said first space to thereby supply said plasma gas to said first space.

7. A substrate processing apparatus according to claim 5, characterized in that said fixing blocks and said gas supply blocks are configured so as to be adjacent to each other.

8. A substrate processing apparatus according to claim 3, characterized in that said inner partition wall is electrically connected to said partition wall attaching portion by engagement with said contact blocks.

9. A substrate processing apparatus according to claim 8, characterized in that said partition wall attaching portion is in the form of a grounded conductor and said inner partition wall is grounded through said partition wall attaching portion.

10. A substrate processing apparatus according to any claim 1, characterized in that said inner partition wall is provided with a heating mechanism for heating said inner partition wall.

11. A substrate processing apparatus according to claim 10, characterized in that said heating mechanism is provided on a side of said inner partition wall facing said outer wall.