Plasma enhanced atomic layer deposition system having reduced contamination
First Claim
1. A deposition system for forming a thin film on a substrate comprising:
- a processing chamber comprising a process space in an upper region of said processing chamber configured to facilitate said thin film deposition, and a transfer space in a lower region of said processing chamber configured to facilitate transfer of said substrate into and out of said processing chamber;
a substrate holder coupled to said processing chamber and configured to support said substrate and to translate vertically between a first position to locate said substrate in said transfer space and a second position to locate said substrate in said process space, said substrate holder comprising a sealing device configured to seal said substrate holder with said processing chamber when said substrate holder is in said second position;
a first pressure control system coupled to said transfer space and configured to provide a substantially contaminant-free environment in said transfer space;
a second pressure control system coupled to said process space and configured to evacuate said process space during processing;
a gas injection system coupled to said processing chamber, and configured to alternatingly introduce a first process material and a second process material to said process space;
a power source coupled to said processing chamber, and configured to couple power to said first process material, or said second process material, or both in said process space to facilitate the formation of plasma; and
a temperature control system coupled to said substrate holder, and configured to control a temperature of said substrate.
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Accused Products
Abstract
A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.
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Citations
23 Claims
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1. A deposition system for forming a thin film on a substrate comprising:
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a processing chamber comprising a process space in an upper region of said processing chamber configured to facilitate said thin film deposition, and a transfer space in a lower region of said processing chamber configured to facilitate transfer of said substrate into and out of said processing chamber;
a substrate holder coupled to said processing chamber and configured to support said substrate and to translate vertically between a first position to locate said substrate in said transfer space and a second position to locate said substrate in said process space, said substrate holder comprising a sealing device configured to seal said substrate holder with said processing chamber when said substrate holder is in said second position;
a first pressure control system coupled to said transfer space and configured to provide a substantially contaminant-free environment in said transfer space;
a second pressure control system coupled to said process space and configured to evacuate said process space during processing;
a gas injection system coupled to said processing chamber, and configured to alternatingly introduce a first process material and a second process material to said process space;
a power source coupled to said processing chamber, and configured to couple power to said first process material, or said second process material, or both in said process space to facilitate the formation of plasma; and
a temperature control system coupled to said substrate holder, and configured to control a temperature of said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of treating a substrate in a deposition system comprising:
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locating a substrate holder at a first position within a transfer space of a processing chamber of said deposition system;
loading said substrate onto said substrate holder while said substrate holder is in said first position;
locating said substrate holder within said processing chamber at a second position within a process space of said processing chamber;
sealing said substrate holder with said processing chamber while said substrate holder is in said second position such that said process space is decoupled from said transfer space;
evacuating said transfer space using a first pressure control system;
evacuating said process space using a second pressure control system;
treating said substrate in said process space by alternatingly exposing said substrate to a first process material and a second process material, and forming plasma during said exposing said substrate to said second process material;
unsealing said substrate holder from said processing chamber and moving said substrate holder from said second position such that said process space is recoupled to said transfer space;
controlling the pressure and flow within the processing chamber and transfer space to reduce the tendency of contaminant producing materials from entering the transfer space from the process chamber;
locating said substrate holder at said first position; and
unloading said substrate when said substrate holder is at said first position. - View Dependent Claims (22)
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23. A deposition system for forming a thin film on a substrate comprising:
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a processing chamber comprising a process space in an upper region of said processing chamber configured to facilitate said thin film deposition, and a transfer space in a lower region of said processing chamber configured to facilitate transfer of said substrate into and out of said processing chamber;
a substrate holder coupled to said processing chamber and configured to support said substrate, and configured to translate vertically between a first position to locate said substrate in said transfer space and a second position to locate said substrate in said process space, wherein said substrate holder comprises a sealing device configured to seal said substrate holder with said processing chamber when said substrate holder is in said second position;
means for controlling the pressure in said transfer space in order to provide a substantially contaminant-free environment in said transfer space;
means for controlling the pressure in said process space in order to evacuate said process space during processing;
means for alternatingly introducing a first process material and a second process material to said process space;
means for coupling power to said processing chamber in order to couple power to said first process material, or said second process material, or both in said process space to facilitate the formation of plasma; and
means for controlling the temperature of said substrate.
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Specification