THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND A METHOD OF MANUFACTURING THE SAME
First Claim
Patent Images
1. A thin-film device comprising:
- a semiconductor film formed over a substrate; and
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains a metal element.
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Abstract
A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.
113 Citations
33 Claims
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1. A thin-film device comprising:
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a semiconductor film formed over a substrate; and
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains a metal element. - View Dependent Claims (2, 3, 4, 5)
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6. A thin-film device comprising:
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a semiconductor film formed over a substrate, wherein the semiconductor film contains a metal element at a concentration not higher than 5×
1018 atoms/cm3; and
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains the metal element. - View Dependent Claims (7, 8, 9, 10)
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11. A thin-film device comprising:
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a semiconductor film formed over a substrate; and
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains phosphorus and a metal element. - View Dependent Claims (12, 13, 14, 15)
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16. A thin-film device comprising:
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a semiconductor film formed over a substrate;
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains a metal element; and
a transparent electrode formed over the n-type semiconductor film. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A thin-film device comprising:
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a semiconductor film formed over a substrate, wherein the semiconductor film contains a metal element at a concentration not higher than 5×
1018 atoms/cm3;
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains the metal element; and
a transparent electrode formed over the n-type semiconductor film. - View Dependent Claims (23, 24, 25, 26, 27)
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28. A thin-film device comprising:
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a semiconductor film formed over a substrate;
an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains phosphorus and a metal element; and
a transparent electrode formed over the n-type semiconductor film. - View Dependent Claims (29, 30, 31, 32, 33)
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Specification