Ambipolar organic thin-film field-effect transistor and making method
First Claim
1. An ambipolar organic thin-film field-effect transistor having metal/insulator/semiconductor structure, wherein the material of which the semiconductor layer is made comprises an organic compound, and the material of which the insulator layer is made comprises an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material, the transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage of the organic compound of the insulator layer between source and gate electrodes, and the transistor exhibits p-type transistor characteristics when polling is not conducted.
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Abstract
In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
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Citations
7 Claims
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1. An ambipolar organic thin-film field-effect transistor having metal/insulator/semiconductor structure, wherein
the material of which the semiconductor layer is made comprises an organic compound, and the material of which the insulator layer is made comprises an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material, the transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage of the organic compound of the insulator layer between source and gate electrodes, and the transistor exhibits p-type transistor characteristics when polling is not conducted.
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7. A method for preparing an ambipolar organic thin-film field-effect transistor, comprising the steps of:
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applying a solution of an organic solvent-soluble organic compound in an organic solvent onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and laying a semiconductor layer on the insulator layer.
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Specification