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Ambipolar organic thin-film field-effect transistor and making method

  • US 20060214162A1
  • Filed: 03/23/2006
  • Published: 09/28/2006
  • Est. Priority Date: 03/25/2005
  • Status: Active Grant
First Claim
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1. An ambipolar organic thin-film field-effect transistor having metal/insulator/semiconductor structure, wherein the material of which the semiconductor layer is made comprises an organic compound, and the material of which the insulator layer is made comprises an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material, the transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage of the organic compound of the insulator layer between source and gate electrodes, and the transistor exhibits p-type transistor characteristics when polling is not conducted.

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