×

Single crystal silicon sensor with additional layer and method of producing the same

  • US 20060214248A1
  • Filed: 06/02/2006
  • Published: 09/28/2006
  • Est. Priority Date: 03/02/2004
  • Status: Active Grant
First Claim
Patent Images

1. A SOI-based MEMS device comprising:

  • a base layer;

    a device layer;

    an insulator layer between the base layer and the device layer; and

    a deposited layer having a portion that is spaced from the device layer;

    the device layer being between the insulator layer and the deposited layer, the device layer having structure, the deposited layer forming a cap to seal the structure.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×