Pattern exposure method and apparatus

• US 20060215139A1
• Filed: 02/14/2006
• Published: 09/28/2006
• Est. Priority Date: 03/24/2005
• Status: Abandoned Application

• Current Assignee: Hitachi VIA Mechanics Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi VIA Mechanics Limited (Hitachi, Ltd.)
• Inventors: Naito, Yoshitatsu, Oshida, Yoshitada, Maruyama, Shigenobu, Yamaguchi, Tsuyoshi, Suzuki, Mituhiro
• Application Number:
  US11/353,017
• Publication Number:
  US 20060215139A1
• Time in Patent Office: Days
• US Class Current: 355/55
• CPC Class Codes: G02B 26/12 using multifaceted mirrors
• CPC Class Codes: G02B 26/123 Multibeam scanners, e.g. using multiple light sources or beam splitters
• CPC Class Codes: G03F 7/70383 Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams maskless lithography using a programmable mask G03F7/70291
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475
• CPC Class Codes: G03F 7/70575 Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
• CPC Class Codes: G03F 7/70791 Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Abstract

A maskless exposure method and a maskless exposure apparatus in which maskless exposure can be performed efficiently with high-directivity illumination light, while the exposure efficiency of solder resist can be improved. Blue-violet semiconductor lasers 12A emitting laser beams 1a with a wavelength of 405 nm and ultraviolet semiconductor lasers 12B emitting laser beams 1b with a wavelength of 375 nm are provided to irradiate a substrate 8 with the laser beams 1a and 1b whose optical axes are made coaxial. In this event, one and the same place on the substrate 8 is irradiated with the laser beams 1a and 1b a plurality of times. Thus, the variation in intensity of the laser beams 1a and 1b is averaged.

Claims

1. A pattern exposure method for moving outgoing beams emitted from light sources and a work relatively so as to expose a desired position of the work to the outgoing beams, the pattern exposure method comprising the steps of:

preparing a plurality of light sources emitting outgoing beams different in wavelength; and

turning on/off the light sources to thereby irradiate one and the same point of the work with a plurality of beams different in wavelength.

2. A pattern exposure method according to claim 1, wherein the light sources are semiconductor lasers.

3. A pattern exposure method according to claim 2, wherein one and the same point of the work is exposed by four or more different semiconductor lasers.

4. A pattern exposure method according to claim 1, wherein a point to be irradiated with the outgoing beams is irradiated with light whose wavelength should not expose the work, within several seconds before or after the point is irradiated with the outgoing beams.

5. A pattern exposure apparatus comprising:

at least two color light sources emitting lights different in wavelength;

an optical system for projecting outgoing beams emitted from the light sources on a work;

a switching means for turning on/off the light sources;

a moving means for moving projected spots and the work relatively; and

a control means for controlling the relative movement of the projected spots and the work and the on/off switching of the light sources synchronously with each other.

6. A pattern exposure apparatus according to claim 5, further comprising:

a light source emitting light whose wavelength cannot expose the work.