Embedded capacitor structure

• US 20060215380A1
• Filed: 03/24/2005
• Published: 09/28/2006
• Est. Priority Date: 03/24/2005
• Status: Active Grant

• Current Assignee: Agency For Science Technology and Research
• Original Assignee: Agency For Science Technology and Research
• Inventors: Wai, Lai Lai, Lu, Chee Wai, Chua, Kai Meng, Lok, Boon Keng
• Granted Patent: US 7,548,432 B2
• Time in Patent Office: Days
• US Class Current: 361/763
• CPC Class Codes: H01G 4/232 electrically connecting two or more layers of a stacked or rolled capacitor
• CPC Class Codes: H01G 4/40 Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H05K 1/0231 Capacitors or dielectric substances
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 1/185 Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00
• CPC Class Codes: H05K 2201/09718 Clearance holes
• CPC Class Codes: H05K 2201/09763 Printed component having superposed conductors, but integrated in one circuit layer
• CPC Class Codes: H05K 3/429 Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers

Abstract

An embedded capacitor structure comprising a main body; at least one embedded capacitor, having a first electrode, a dielectric layer, and a second electrode, formed in the main body; and at least one via electrical connection formed in the main body; wherein at least one of the first and second electrodes is free from direct electrical connection to the via electrical connections.

Claims

1. An embedded capacitor structure comprising

a main body;

at least one embedded capacitor, having a first electrode, a dielectric layer, and a second electrode, formed in the main body; and

at least one via electrical connection formed in the main body;

wherein at least one of the first and second electrodes is free from direct electrical connection to the via electrical connections.

2. The structure as claimed in claim 1, further comprising at least one discrete component mounted on a surface of the main body.

3. The structure as claimed in claim 2, wherein the discrete component comprises an IC, a capacitor or both.

4. The structure as claimed in claims 2, wherein at least one of the via electrical connections is formed substantially underneath the discrete component.

5. The structure as claimed in claim 1, wherein the electrodes directly electrically connected to respective via electrical connections are formed as branches of the respective via electrical connections.

6. The structure as claimed in claim 5, wherein one or more of the electrodes directly electrically connected to respective via electrical connections comprise at least portions of respective capture pads of the via electrical connections.

7. The structure as claimed in claim 5, wherein the embedded capacitors are formed symmetrically or anti-symmetrically with respect to the respective via electrical connections.

8. The structure as claimed in claim 1, further comprising at least one discrete capacitor embedded in the main body.

9. The structure as claimed in claim 1, wherein the electrodes free from direct electrical connection to the via electrical connections function as high frequency decouplers.

10. The structure as claimed in claim 9, wherein the electrodes free from direct electrical connection to the via electrical connections provide damping to suppress resonances due to a power plane cavity effect.

11. A method of manufacturing an embedded capacitors structure, the method comprising:

forming at least one embedded capacitor in a main body for the embedded capacitor structure, the embedded capacitor having a first electrode, a dielectric layer, and a second electrode; and

forming at least one via electrical connection in the main body;

wherein at least one of the first and second electrode is free from direct electrical connection to the via electrical connections.

12. The method as claimed in claim 11, wherein the method comprises PCB processing steps, LTCC processing steps, or both.