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Wordline enable circuit in semiconductor memory device and method thereof

  • US 20060215475A1
  • Filed: 12/30/2005
  • Published: 09/28/2006
  • Est. Priority Date: 03/24/2005
  • Status: Active Grant
First Claim
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1. A semiconductor memory device for activating plural wordlines, comprising:

  • a wordline control signal generating unit for outputting an untoggled wordline control signal based on a wordline select check signal, a self-refresh mode signal and a toggled wordline control signal while a unit wordline block is enabled in a self-refresh mode;

    a wordline enable signal generating unit for generating a wordline enable control signal, controlled by the untoggled wordline control signal and a toggled address signal, and a first to an n-th wordline enable power supply signals, controlled by the toggled wordline control signal and each address signal; and

    a wordline block enable unit for enabling each wordline, controlled by the wordline enable control signal and the first to the n-th wordline enable power supply signals.

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