Method for fabricating semiconductor device and semiconductor device

• US 20060216920A1
• Filed: 02/03/2006
• Published: 09/28/2006
• Est. Priority Date: 03/22/2005
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro
• Granted Patent: US 7,439,185 B2
• Time in Patent Office: Days
• US Class Current: 438/618
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of fabricating a semiconductor device having an air-gapped multilayer interconnect wiring structure is disclosed. After having formed a first thin film on or above a substrate, define a first opening in the first thin film. Then, deposit a conductive material in the first opening. Then form a second thin film made of a porous material above the first thin film with the conductive material being deposited in the first opening. Next, define in the second thin film a second opening extending therethrough, followed by deposition of a conductive material in the second opening. The first thin film is removed through voids in the second thin film after having deposited the conductive material in the second opening. An integrated semiconductor device as manufactured thereby is also disclosed.

Claims

1. A method for fabricating a semiconductor device comprising:

forming a first thin film above a substrate;

defining a first opening in said first thin film;

depositing a conductive material in the first opening;

forming a second thin film made of a porous material above said first thin film with said conductive material being deposited in the first opening;

defining in said second thin film a second opening extending therethrough;

depositing a conductive material in the second opening; and

removing said first thin film through voids in said second thin film after deposition of said conductive material in the second opening.

2. The method according to claim 1, wherein said second opening is coupled to said conductive material as deposited in the first opening.

3. The method according to claim 1, wherein said first thin film comprises a silicon and wherein said silicon is subjected to dry etching to thereby remove said first thin film.

4. The method according to claim 1, wherein a modified film of said first thin film is formed on a side wall of the first opening after having defined the first opening and yet prior to deposition of said conductive material in the first opening.

5. The method according to claim 4, wherein a modified film of said first thin film is formed on a surface of said first thin film as exposed to inside of the second opening after having defined the second opening and yet prior to deposition of said conductive material in the second opening.

6. The method according to claim 1, further comprising:

oxidizing a surface of said first thin film after having defined the first opening and yet prior to deposition of said conductive material in the first opening.

7. The method according to claim 1, further comprising:

selectively capping a top surface of said conductive material as deposited in the first opening.

8. The method according to claim 1, wherein said second thin film is made of a material selected from the group consisting of SiOC, methylsiloxane (“

MSQ”

), hydrogen silses-quioxane (HSQ), and organic polymer.

9. The method according to claim 1, wherein said second thin film is formed to have an open pore.

10. The method according to claim 1, wherein a fluorine-containing gas is used to remove said first thin film.

11. The method according to claim 1, wherein at least one of fluorine radical and chlorine radical is used to remove said first thin film.

12. A method of fabricating a semiconductor device comprising:

forming above a substrate a first wiring layer with a plurality of electrical wires being buried in a sacrifice film;

forming above said first wiring layer a second wiring layer having via plugs for connection to said wires; and

removing of said sacrifice film between adjacent wires of said first wiring layer to thereby form a cavity after having formed said second wiring layer.

13. The method according to claim 12, wherein during formation of said second wiring layer, the via plugs are buried in a porous dielectric film permitting removal of said sacrifice film of said first wiring layer through pores of said porous dielectric film.

14. The method according to claim 12, wherein during formation of said second wiring layer, a plurality of electrical wires are buried in a sacrifice film;

and wherein removal of said sacrifice film includes removing said sacrifice film of said second wiring layer to thereby form cabities in the first and second wiring layers.

15. The method according to claim 12, wherein a modified film is formed on a surface of said sacrifice film prior to burying of said plurality of wires in the sacrifice film.

16. A semiconductor device comprising:

a plurality of wires having a cavity defined between neighboring ones of said wires; and

a reinforcing film being disposed on a sidewall of each said wire and having a flange projecting toward said cavity at least one portion thereof.

17. The device according to claim 16, further comprising:

a second reinforcing film between the sidewall of said wire and said reinforcing film having the flange.

18. The device according to claim 16, further comprising:

a via plug connected to a corresponding one of said wires, said flange being formed to underlie said via plug while eliminating overlap with any one of said wires.

19. The device according to claim 18, wherein said via plug is buried in a porous dielectric film.

20. The device according to claim 16, further comprising:

a diffusion prevention film of a wiring material as selectively formed to overlie said plurality of wires.