Electro-optical device, method of manufacturing the same, and electronic apparatus
First Claim
1. An electro-optical device, comprising:
- a substrate;
data lines and scanning lines that are arranged so as to intersect each other on the substrate;
thin film transistors including a channel region, the thin film transistors being disposed below the data lines on the substrate;
storage capacitors that at least partially face the channel region of corresponding the thin film transistors in plan view above the substrate, and that are disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order away from the data lines;
pixel electrodes that are disposed for respective pixels, the pixel electrodess being defined in correspondence with intersections of the data lines and the scanning lines in plan view above the substrate, the pixel electrodes being disposed above the storage capacitors, each of the pixel electrodes being electrically coupled to the pixel-potential-side electrode and each of the thin film transistors; and
at least one of the fixed-potential-side electrode and the pixel-potential-side electrode including a first conductive light shielding film.
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Accused Products
Abstract
An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors. At least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film.
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Citations
13 Claims
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1. An electro-optical device, comprising:
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a substrate;
data lines and scanning lines that are arranged so as to intersect each other on the substrate;
thin film transistors including a channel region, the thin film transistors being disposed below the data lines on the substrate;
storage capacitors that at least partially face the channel region of corresponding the thin film transistors in plan view above the substrate, and that are disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order away from the data lines;
pixel electrodes that are disposed for respective pixels, the pixel electrodess being defined in correspondence with intersections of the data lines and the scanning lines in plan view above the substrate, the pixel electrodes being disposed above the storage capacitors, each of the pixel electrodes being electrically coupled to the pixel-potential-side electrode and each of the thin film transistors; and
at least one of the fixed-potential-side electrode and the pixel-potential-side electrode including a first conductive light shielding film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13)
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12. A method of manufacturing an electro-optical device including a substrate, data lines and scanning lines that are arranged so as to intersect each other on the substrate, top-gate-type thin film transistors disposed below the data lines, storage capacitors disposed above the data lines, and pixel electrodes disposed above the storage capacitors, the method comprising:
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forming the thin film transistors in regions corresponding to intersections of the data lines and the scanning lines on the substrate in plan view;
forming the data lines above the thin film transistors;
forming each of the storage capacitors in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate, such that a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode are stacked above the data lines in this order and at least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film; and
forming each of the pixel electrodes on each of the storage capacitors so as to be electrically coupled to each of the thin film transistors and the pixel-potential-side electrode for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate.
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Specification