Electro-optical device, method of manufacturing the same, and electronic apparatus

• US 20060220033A1
• Filed: 02/27/2006
• Published: 10/05/2006
• Est. Priority Date: 03/07/2005
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Yamasaki, Yasuji
• Granted Patent: US 7,969,518 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line

Abstract

An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors. At least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film.

Claims

1. An electro-optical device, comprising:

a substrate;

data lines and scanning lines that are arranged so as to intersect each other on the substrate;

thin film transistors including a channel region, the thin film transistors being disposed below the data lines on the substrate;

storage capacitors that at least partially face the channel region of corresponding the thin film transistors in plan view above the substrate, and that are disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order away from the data lines;

pixel electrodes that are disposed for respective pixels, the pixel electrodess being defined in correspondence with intersections of the data lines and the scanning lines in plan view above the substrate, the pixel electrodes being disposed above the storage capacitors, each of the pixel electrodes being electrically coupled to the pixel-potential-side electrode and each of the thin film transistors; and

at least one of the fixed-potential-side electrode and the pixel-potential-side electrode including a first conductive light shielding film.

2. The electro-optical device according to claim 1,

the thin film transistors corresponding to intersections of the data lines and the scanning lines in plan view and being disposed such that the channel region is at least partially covered by each of the data lines in plan view;

and

each of the data lines including a second conductive light shielding film.

3. The electro-optical device according to claim 1,

each of the scanning lines being disposed in a region including a region facing the channel region in plan view that is above the substrate, disposed below each of the thin film transistors on the substrate, coupled to a gate of each of the thin film transistors through a contact hole, and including a third conductive light shielding film.

4. The electro-optical device according to claim 1,

an interlayer insulating film subjected to a planarization process being stacked at least one of between the scanning lines and the thin film transistors, between the thin film transistors and the data lines, between the data lines and the storage capacitors, and between the storage capacitors and the pixel electrodes.

5. The electro-optical device according to claim 1,

the dielectric film being formed in non-opening regions located between opening regions of the respective pixels in plan view above the substrate.

6. The electro-optical device according to claim 1,

a conductive film being formed on a surface of each of the data lines facing the channel region, the conductive film having a lower reflectivity than a conductive film forming a main body of each of the data lines.

7. The electro-optical device according to claim 1,

an edge of the fixed-potential-side electrode facing at least the pixel-potential-side electrode with the dielectric film interposed therebetween being formed with a taper.

8. The electro-optical device according to claim 1,

the pixel-potential-side electrode being formed in a region included in a region where the fixed-potential-side electrode is formed, in plan view above the substrate.

9. The electro-optical device according to claim 1, further comprising:

a relay layer that is formed on the substrate by using a conductive film located at the same layer as the data lines and relay-connects the pixel-potential-side electrode and a drain of each of the thin film transistors.

10. The electro-optical device according to claim 9,

each of the pixel electrodes being electrically coupled to the relay layer through an extending portion of the pixel-potential-side electrode.

11. An electronic apparatus, comprising:

the electro-optical device according to claim 1.

13. The electro-optical device according to claim 11,

forming each of the storage capacitors including forming a taper at an edge of the fixed-potential-side electrode facing at least the pixel-potential-side electrode with the dielectric film interposed therebetween by using at least one of wet etching, plasma etching, and O₂ cleaning processes.

12. A method of manufacturing an electro-optical device including a substrate, data lines and scanning lines that are arranged so as to intersect each other on the substrate, top-gate-type thin film transistors disposed below the data lines, storage capacitors disposed above the data lines, and pixel electrodes disposed above the storage capacitors, the method comprising:

forming the thin film transistors in regions corresponding to intersections of the data lines and the scanning lines on the substrate in plan view;

forming the data lines above the thin film transistors;

forming each of the storage capacitors in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate, such that a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode are stacked above the data lines in this order and at least one of the fixed-potential-side electrode and the pixel-potential-side electrode includes a first conductive light shielding film; and

forming each of the pixel electrodes on each of the storage capacitors so as to be electrically coupled to each of the thin film transistors and the pixel-potential-side electrode for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate.