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Semiconductor device and fabrication method of the same

  • US 20060220042A1
  • Filed: 03/30/2006
  • Published: 10/05/2006
  • Est. Priority Date: 03/31/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a mask layer having openings on a substrate;

    a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that is used as a mask;

    a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer; and

    a drain electrode or a collector electrode formed either on or below the GaN-based semiconductor layer.

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