MULTI-CHIP STRUCTURE AND METHOD OF ASSEMBLING CHIPS

• US 20060220259A1
• Filed: 01/24/2006
• Published: 10/05/2006
• Est. Priority Date: 01/25/2005
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung, Lin, Shih-Hsiung, Chen, Ke-Hung
• Granted Patent: US 8,294,279 B2
• Time in Patent Office: Days
• US Class Current: 257/778
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13118 : Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/1312 : Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 2224/13123 : Magnesium [Mg] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/26145 : Flow barriers
• CPC Class Codes: H01L 2224/26175 : Flow barriers
• CPC Class Codes: H01L 2224/27013 : for holding or confining the layer connector, e.g. solder flow barrier
• CPC Class Codes: H01L 2224/29099 : Material
• CPC Class Codes: H01L 2224/29109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83051 : Forming additional members, e.g. dam structures
• CPC Class Codes: H01L 2224/83365 : Shape, e.g. interlocking features
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06555 : Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06582 : Housing for the assembly, e.g. chip scale package [CSP]
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A method of assembling chips. A first chip and a second chip are provided. At least one conductive pillar is formed on the first chip, and a conductive connecting material is formed on the conductive pillar. The second chip also comprises at least one conductive pillar. The first chip is connected to the second chip via the conductive pillars and the conductive connecting material.

Claims

1. A multi-chip structure comprising:

a first chip;

a second chip;

at least a conductive pillar on the first chip;

a conductive connecting material connecting said conductive pillar to said second chip;

an underfill material filling a gap between said first chip and said second chip; and

at least one embankment structure disposed on said second chip for protecting a wire-bonding pad of said second chip from being contaminated by said underfill material.

2. The multi-chip structure of claim 1, wherein the melting point of said conductive pillar is higher than the fusion temperature of said conductive connecting material.

3. The multi-chip structure of claim 1, wherein said conductive pillar is formed of a material selected from a group consisting of tin, lead, copper, nickel, silver, zinc, bismuth, magnesium, antimony, indium and an alloy of at least two thereof.

4. The multi-chip structure of claim 1, wherein said conductive connecting material is formed of a material selected from a group consisting of tin, lead, copper, nickel, silver, zinc, bismuth, magnesium, antimony, indium and an alloy of at least two thereof.

5. The multi-chip structure of claim 1 further comprising a post-passivation dielectric layer atop said second chip, wherein said embankment structure is formed on said post-passivation dielectric layer.

6. The multi-chip structure of claim 5, wherein a ditch is formed in said post-passivation dielectric layer for guiding said underfill material toward one direction.

7. The multi-chip structure of claim 1, wherein said embankment structure is about 10 micrometers away from said first chip.