Magneto-elastic anisotropy assisted thin film structure

• US 20060222904A1
• Filed: 11/02/2005
• Published: 10/05/2006
• Est. Priority Date: 04/01/2005
• Status: Active Grant

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Inventors: Peng, Wei, Hsia, Yiao-Tee, Klemmer, Timothy J.
• Granted Patent: US 8,119,265 B2
• Time in Patent Office: Days
• US Class Current: 428/832
• CPC Class Codes: G11B 5/72 Protective coatings, e.g. anti-static or antifriction
• CPC Class Codes: G11B 5/73913 Composites or coated substrates
• CPC Class Codes: G11B 5/73919 Aluminium or titanium elemental or alloy substrates
• CPC Class Codes: G11B 5/73921 Glass or ceramic substrates
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor

Abstract

A thin film structure, such as a magnetic recording media, having a magnetic layer and a stress-effecting layer is disclosed. The stress-effecting layer induces a magneto-elastic anisotropy in the magnetic layer. The stress-effecting layer can be activated by the application of an external stress and/or strain. The induced magneto-elastic anisotropy can transiently achieve and/or enhance a tilt angle of the medium. The medium can be a perpendicular magnetic recording medium, a longitudinal magnetic recording medium and/or a tilted magnetic recording medium. The magnetic recording media is suitable for use with a data storage system, such as a HAMR data storage system.

Claims

1. A thin film structure, comprising:

a magnetic layer; and

a stress-effecting layer adjacent the magnetic layer.

2. The thin film structure of claim 1, wherein the stress-effecting layer comprises at least one of a magnetostrictive material, a piezoelectric material, a thermal expansion material or an electrostatic material.

3. The thin film structure of claim 2, wherein the magnetostrictive material comprises iron, cobalt, and/or nickel in combination with praseodymium, terbium, samarium, holium, erbium and/or dysprosium.

4. The thin film structure of claim 2, wherein the piezoelectric material comprises quartz crystal, lithium niobates, barium titanate, lead titanate, lead zirconate-lead titanate, meta-lead niobate, and/or polyvinylidenfluoride.

5. The thin film structure of claim 2, wherein the thermal expansion material comprises a shape memory alloy, aluminum, copper, nickel, iron, silver, gold, and/or alloys thereof.

6. The thin film structure of claim 2, wherein the electrostatic material comprises silver, copper, aluminum, tungsten, iron, platinum, managanin, lead and/or alloys thereof.

7. The thin film structure of claim 1, wherein the magnetic layer is a perpendicular magnetic recording layer, a longitudinal magnetic recording layer, or a tilted magnetic recording layer.

8. The thin film structure of claim 1 formed as a data storage medium.

9. The thin film structure of claim 1, wherein the magnetic layer is structured and arranged for data storage.

10. The thin film structure of claim 1, further comprising an additional stress-effecting layer adjacent the magnetic layer.

11. The thin film structure of claim 10, wherein the stress-effecting layer comprises an electrostatic material having a first polarity and the additional stress-effecting layer comprises an electrostatic material having a second polarity, the second polarity being opposite the first polarity.

12. A data storage system, comprising:

a recording head; and

a recording medium positioned adjacent the recording head, the recording medium comprising;

a magnetic layer; and

a stress-effecting layer adjacent the magnetic layer.

13. The data storage system of claim 12, wherein the stress-effecting layer comprises at least one of a magnetostrictive material, a piezoelectric material, a thermal expansion material or an electrostatic material.

14. The data storage system of claim 12, wherein the magnetic layer is a perpendicular magnetic recording layer, a longitudinal magnetic recording layer, or a tilted magnetic recording layer.

15. The data storage system of claim 12, wherein the magnetic layer is structured and arranged for data storage.

16. The data storage system of claim 12, wherein the recording head is a heat assisted magnetic recording head.

17. The data storage system of claim 12, further comprising an activator in communication with the stress-effecting layer.

18. The data storage system of claim 12, further comprising means for activating the stress-effecting layer.

19. A method, comprising:

providing a stress-effecting layer adjacent a magnetic layer; and

applying an external force to the stress-effecting layer to induce a magneto-elastic anisotropy in the magnetic layer.

20. The method of claim 19, wherein the applying an external force to the stress-effecting layer induces a tilting effect in the magnetic layer.