Structure and method for III-nitride device isolation
First Claim
1. A method of fabricating a semiconductor device comprising:
- selectively changing the conductivity of portions of a III-nitride semiconductor body from one conductivity to another conductivity; and
charge-selectively removing said portions to obtain voids in said III-nitride semiconductor body.
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Accused Products
Abstract
Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The dopant selective etch may be an electro-chemical or photo-electro-chemical etch. The desired isolation area may be identified by changing the conductivity type of the semiconductor material to be etched. The etch process can remove a conductive layer to isolate a device atop the conductive layer. The etch process can be self stopping, where the process automatically terminates when the selectively doped semiconductor material is removed.
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Citations
24 Claims
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1. A method of fabricating a semiconductor device comprising:
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selectively changing the conductivity of portions of a III-nitride semiconductor body from one conductivity to another conductivity; and
charge-selectively removing said portions to obtain voids in said III-nitride semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for isolating III-nitride semiconductor devices, comprising:
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selectively exposing a given surface area of a semiconductor material near a device to be isolated;
applying a dopant selective etch to the semiconductor material to remove the semiconductor material exposed in said given surface area. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification