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Plasma processing method and plasma processing apparatus

  • US 20060223317A1
  • Filed: 03/14/2006
  • Published: 10/05/2006
  • Est. Priority Date: 03/29/2005
  • Status: Active Grant
First Claim
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1. A plasma processing method, comprising:

  • removing an organic material film forming an upper layer relative to a patterned SiOCH series film by using a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×

    1011 cm

    3
    and an oxygen radical density not higher than 1×

    1014 cm

    3
    .

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