Plasma processing method and plasma processing apparatus
First Claim
Patent Images
1. A plasma processing method, comprising:
- removing an organic material film forming an upper layer relative to a patterned SiOCH series film by using a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×
1011 cm−
3 and an oxygen radical density not higher than 1×
1014 cm−
3.
1 Assignment
0 Petitions
Accused Products
Abstract
The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×1011 cm−3 and an oxygen radical density not higher than 1×1014 cm−3.
-
Citations
20 Claims
-
1. A plasma processing method, comprising:
-
removing an organic material film forming an upper layer relative to a patterned SiOCH series film by using a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×
1011 cm−
3 and an oxygen radical density not higher than 1×
1014 cm−
3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15)
-
-
10. A plasma processing method, comprising:
-
removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas consisting of an O2 gas and an inert gas, wherein the flow rate ratio of the O2 gas in the process gas is not higher than 3%, the process pressure is 75 to 125 Pa, and a microwave having a frequency of 500 MHz to 10 GHz is applied to a surface wave type plasma generating means with the power per unit area of the microwave set at 2.0 to 5.0 W/cm2. - View Dependent Claims (16)
-
-
11. A plasma processing method, comprising:
-
removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas consisting of an O2 gas and an inert gas by using a surface wave type plasma processing apparatus in which a microwave is introduced by using a slot antenna into a process chamber so as to permit the surface wave to be propagated, thereby generating plasma;
wherein the surface wave type plasma processing apparatus comprises a measuring section for measuring the plasma parameter of the plasma within the process chamber, and the plasma parameter is measured by the measuring section so as to carry out the plasma processing while monitoring the plasma parameter. - View Dependent Claims (12, 13, 14, 17)
-
-
18. A control program that, when executed, works a computer to control a plasma processing apparatus using a plasma processing method, the method comprising:
removing an organic material film forming an upper layer relative to a patterned SiOCH series film by using a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×
1011 cm−
3 and an oxygen radical density not higher than 1×
1014 cm−
3.
-
19. A computer readable storage medium containing a software that, when executed, works a computer to control a plasma processing apparatus using a plasma processing method, the method comprising:
-
removing an organic material film forming an upper layer relative to a patterned SiOCH series film by using a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×
1011 cm−
3 and an oxygen radical density not higher than 1×
1014 cm−
3.
-
-
20. A plasma processing apparatus in which a microwave is introduced by a slot antenna into a process chamber so as to propagate a surface wave, thereby generating a plasma, the apparatus comprising:
a control section for controlling the plasma processing apparatus so as to carry out within the process chamber a plasma processing method comprising the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by using a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×
10 11 cm−
3 and an oxygen radical density not higher than 1×
1014 cm−
3.
Specification