Method for the production of monocrystalline structures and component
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Abstract
According to prior art, structural errors in substrates in epitactic crystal growth are often carried over from the substrate on which the new material is to be deposited. This leads to a reduction in mechanical properties. According to the method, an intermediate layer is deposited prior to the deposition of epitactic material. Said intermediate layer prevents structural errors in the substrate from being carried over to the newly filled area.
60 Citations
24 Claims
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1-10. -10. (canceled)
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11. A process for producing single-crystal structures from metallic superalloys, comprising:
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providing a substrate with a single-crystal structure from a epitaxial growth of a layer material via a first material application process;
applying an intermediate layer where no single-crystal or directional structure occurs on the substrate; and
epitaxially growing the layer material on the intermediate layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A component formed from a metallic superalloy, comprising:
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a substrate having at least partially single-crystal structures;
an intermediate layer having no single-crystal or directional structure in the substrate; and
a layer material with a single-crystal structure is present on the intermediate layer. - View Dependent Claims (23, 24)
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Specification