Ti oxide film having visible light-responsive photocatalytic activites and process for its production

• US 20060225999A1
• Filed: 06/08/2006
• Published: 10/12/2006
• Est. Priority Date: 12/09/2003
• Status: Abandoned Application

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Fukawa, Makoto, Odaka, Hidefumi, Oyama, Takuji, Mitsui, Akira
• Application Number:
  US11/448,874
• Publication Number:
  US 20060225999A1
• Time in Patent Office: Days
• US Class Current: 204/192.260
• CPC Class Codes: B01D 2255/802 Photocatalytic
• CPC Class Codes: B01D 53/007 by irradiation
• CPC Class Codes: B01D 53/885 Devices in general for catalytic purification of waste gases
• CPC Class Codes: B01J 21/063 Titanium; Oxides or hydroxides thereof
• CPC Class Codes: B01J 35/004 Photocatalysts
• CPC Class Codes: B01J 35/39 Photocatalytic properties
• CPC Class Codes: B01J 37/347 Ionic or cathodic spraying; Electric discharge
• CPC Class Codes: C03C 17/2456 Coating containing TiO2
• CPC Class Codes: C03C 17/256 Coating containing TiO2
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 2217/71 Photocatalytic coatings
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium

Abstract

To provide a visible light responsible Ti oxide film which has hydrophilicity and antifogging property and is excellent in transparency and which has an ability to decompose gas by UV radiation, and a process for its production, as well as a Ti oxide film-coated substrate.

A Ti oxide film formed on a substrate, characterized in that when a voltage is applied to the Ti oxide film while the Ti oxide film is irradiated with light of a xenon lamp having a luminance of 100 mW/cm² and having ultraviolet light of less than 400 nm cutoff, the electric current value is at least 1,000 times the electric current value when the same voltage as said voltage is applied to the Ti oxide film in a dark place.

Claims

1. A Ti oxide film formed on a substrate, characterized in that when a voltage is applied to the Ti oxide film while the Ti oxide film is irradiated with light of a xenon lamp having a luminance of 100 mW/cm² and having ultraviolet light of less than 400 nm cutoff, the electric current value is at least 1,000 times the electric current value when the same voltage as said voltage is applied to the Ti oxide film in a dark place.

2. The Ti oxide film according to claim 1, wherein an overcoating is formed on the Ti oxide film formed on the substrate.

3. The Ti oxide film according to claim 1, wherein the thickness of the Ti oxide film is from 5 to 600 nm.

4. The Ti oxide film according to claim 1, wherein the absorbance of the Ti oxide film at a wavelength of 400 nm is from 0.3 to 40%.

5. The Ti oxide film according to claim 1, wherein the total of contents of titanium and oxygen in the Ti oxide is at least 99.0 mass %.

6. The Ti oxide film according to claim 1, wherein an undercoating film is formed between the Ti oxide film and the substrate.

7. The Ti oxide film according to claim 1, wherein the substrate is a glass substrate.

8. The Ti oxide film according to claim 7, wherein the glass substrate is UV screening glass.

9. The Ti oxide film according to claim 1, wherein the Ti oxide film is formed on the inside surface of glass for vehicles.

10. A Ti oxide film-coated substrate which is a substrate having the Ti oxide film as defined in claim 1 formed on the surface.

11. A Ti oxide film formed on a substrate, characterized in that the Ti oxide film has a crystal structure of anatase type, the surface layer of the Ti oxide film is TiO₂, the interior of the Ti oxide film is TiO_x, and the total of contents of titanium, nitrogen and oxygen in the Ti oxide film is at least 99.0 mass %.

12. The Ti oxide film according to claim 11, wherein an overcoating is formed on the Ti oxide film formed on the substrate.

13. The Ti oxide film according to claim 11, wherein the thickness of the Ti oxide film is from 5 to 600 nm.

14. The Ti oxide film according to claim 11, wherein the surface layer of the Ti oxide film is within a range of from 3 to 20 nm from the surface of the film.

15. The Ti oxide film according to claim 11, wherein the absorbance of the Ti oxide film at a wavelength of 400 nm is from 0.3 to 40%.

16. The Ti oxide film according to claim 11, wherein the total of contents of titanium and oxygen in the Ti oxide film is at least 99.0 mass %.

17. The Ti oxide film according to claim 11, wherein an undercoating film is formed between the Ti oxide film and the substrate.

18. The Ti oxide film according to claim 11, wherein the substrate is a glass substrate.

19. The Ti oxide film according to claim 18, wherein the glass substrate is UV screening glass.

20. The Ti oxide film according to claim 11, wherein the Ti oxide film is formed on the inside surface of glass for vehicles.

21. A Ti oxide film-coated substrate which is a substrate having the Ti oxide film as defined in claim 11 formed on the surface.

22. A process for producing a Ti oxide film which comprises forming on a substrate a Ti oxide film by a sputtering method in an atmosphere of at least one gas selected from the group consisting of a rare gas, a nitrogen-containing gas and an oxygen-containing gas by means of a sputtering target composed of TiO_x (1<

x<

2) wherein the total of contents of titanium and oxygen is at least 99.0 mass %, and then firing the Ti oxide film in the presence of oxygen at a temperature of from 400 to 750°

C. for from 1 to 28 minutes.

23. The process for producing a Ti oxide film according to claim 22, wherein the pressure during the deposition of the Ti oxide film is from 1.5 to 6 Pa.

24. A process for producing a Ti oxide film which comprises forming a Ti oxide film on a substrate by a sputtering method in an atmosphere of at least one gas selected from the group consisting of a rare gas, a nitrogen-containing gas and an oxygen-containing gas by means of a sputtering target composed of TiO_x (1<

x<

2) wherein the total of contents of titanium and oxygen is at least 99.0 mass %, then forming a Si oxide film by a sputtering method under a deposition pressure of at least 1.0 Pa, followed by firing in the presence of oxygen at a temperature of from 400 to 750°

C. for from 1 to 28 minutes.