Etching method
First Claim
1. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component by using a plasma derived from an etching gas containing a H2 gas, a N2 gas, and a F2 gas, but no component which oxidizes the organic component.
0 Assignments
0 Petitions
Accused Products
Abstract
An interlayer insulating film composed of an organic compound film containing an organic component as a main constituent is deposited on a semiconductor substrate. Then, etching is performed with respect to the interlayer insulating film by using a plasma derived from an etching gas containing an ammonia gas as a main constituent. As a result, active hydrogen is generated in the plasma derived from the ammonia gas to decompose the organic component into hydrogen cyanide, whereby etching proceeds. Since a surface of the organic compound film is efficiently nitrided by nitrogen generated from the ammonia gas, the sidewalls of a depressed portion in the organic compound film are protected so that an excellent anisotropic property is provided. Since the etching gas does not contain a component which oxidizes the organic compound film, the problem does not occur that a gas is generated from the organic compound film in a subsequent heat treatment process.
219 Citations
14 Claims
- 1. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component by using a plasma derived from an etching gas containing a H2 gas, a N2 gas, and a F2 gas, but no component which oxidizes the organic component.
- 3. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component by using a plasma derived from an etching gas containing a H2 gas and a nitrogen trifluoride gas, but no component which oxidizes the organic component.
- 5. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component by using a plasma derived from an etching gas containing a N2 gas and a fluorinated hydrocarbon gas as main constituents, but containing no O2 gas as a component.
- 7. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component as main constituents by using a plasma derived from an etching gas containing a carbon dioxide gas and a fluorine gas as main constituents.
- 9. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component as main constituents by using a plasma derived from an etching gas containing a carbon dioxide gas and a fluorinated hydrocarbon gas as main constituents.
- 11. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component as main constituents by using a plasma derived from an etching gas containing a carbon monoxide gas and a fluorinated gas as main constituents.
- 13. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component as main constituents by using a plasma derived from an etching gas containing a carbon monoxide gas and a fluorinated gas as main constituents.
Specification