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Etching method

  • US 20060226121A1
  • Filed: 06/20/2006
  • Published: 10/12/2006
  • Est. Priority Date: 01/27/1999
  • Status: Abandoned Application
First Claim
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1. An etching method comprising the step of performing anisotropic etching with respect to an interlayer insulating film composed of an organic-inorganic hybrid film containing an organic component and a silica component by using a plasma derived from an etching gas containing a H2 gas, a N2 gas, and a F2 gas, but no component which oxidizes the organic component.

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