High frequency heating apparatus
First Claim
1. A high frequency heating apparatus comprising:
- a unidirectional power source portion for converting a commercial power source in a unidirection;
at least one piece of a semiconductor switching element;
an inverter portion for converting a power from the unidirectional power source portion into a high frequency power by making the semiconductor switching element to ON/OFF;
a boost transformer for boosting an output voltage of the inverter portion;
a high voltage rectifying portion for subjecting an output voltage of the boost transformer to multiplying voltage rectification;
a magnetron for irradiating an output of the high voltage rectifying portion as an electromagnetic wave;
a shunt resistor electrically interposed in series with a portion capable of measuring an output current of the unidirectional power source portion;
a buffer for outputting a voltage generated by making a current flow to the shunt resistor; and
a control portion for controlling ON/OFF of the semiconductor switching element to control constant an output of the buffer to a predetermined value.
1 Assignment
0 Petitions
Accused Products
Abstract
There is constructed a constitution such that a shunt resistor 30 is interposed in series with a portion capable of measuring an output current of a unidirectional power source portion 1 of a high frequency heating apparatus and a voltage generated at the shunt resistor 30 is outputted by a buffer 31. Further, an operational amplifier 3101 having a high input impedance is used for the buffer 31. Further, a diode bridge 101 and a semiconductor switching element 205 are fixed to a common heat radiating plate 33, the heat radiating plate 33 is formed with a notched portion 33a to thereby ensure insulating distances to the diode bridge 101 and the semiconductor switching element 205, and the shunt resistor 30 is arranged on a straight line the same as that between the diode bridge 101 and the semiconductor switching element 205.
14 Citations
19 Claims
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1. A high frequency heating apparatus comprising:
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a unidirectional power source portion for converting a commercial power source in a unidirection;
at least one piece of a semiconductor switching element;
an inverter portion for converting a power from the unidirectional power source portion into a high frequency power by making the semiconductor switching element to ON/OFF;
a boost transformer for boosting an output voltage of the inverter portion;
a high voltage rectifying portion for subjecting an output voltage of the boost transformer to multiplying voltage rectification;
a magnetron for irradiating an output of the high voltage rectifying portion as an electromagnetic wave;
a shunt resistor electrically interposed in series with a portion capable of measuring an output current of the unidirectional power source portion;
a buffer for outputting a voltage generated by making a current flow to the shunt resistor; and
a control portion for controlling ON/OFF of the semiconductor switching element to control constant an output of the buffer to a predetermined value. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of mounting a shunt resistor in a high frequency heating apparatus comprising a unidirectional power source portion for converting a commercial power source into a unidirection, an inverter portion including at least one piece of a semiconductor switching element for converting a power from the unidirectional power source portion into a high frequency power by making the semiconductor switching element ON/OFF, and a shunt resistor for measuring an output current of the unidirectional power source portion, said method comprising the steps of:
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separately arranging a rectifying element for subjecting an alternating current power source of the unidirectional power source portion to full-wave rectification and the semiconductor switching element on a same straight line above a printed board; and
arranging the shunt resistor between the rectifying element and the semiconductor switching element and on a straight line the same as a straight line of the rectifying element and the semiconductor switching element.
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16. A method of mounting a shunt resistor in a high frequency heating apparatus comprising a unidirectional power source portion for converting a commercial power source into a unidirection, an inverter portion including at least one piece of a semiconductor switching element for converting a power from the unidirectional power source portion into a high frequency power by making the semiconductor switching element ON/OFF, and a shunt resistor for measuring an output current of the unidirectional power source portion, said method comprising the steps of:
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inserting the shunt resistor which is a bare resistor wire into a conductive through hole on a board; and
clinching the shunt resistor to fix to the board.
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17. A high frequency heating apparatus comprising:
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a rectifying and smoothing portion for generating an inverter power source voltage from the commercial power source;
an inverter portion including a semiconductor switching element for converting a power from the rectifying and smoothing portion into a high frequency power by making the semiconductor switching element ON/OFF;
a shunt resistor for detecting an input current flowing from the rectifying and smoothing portion to the inverter portion;
a direct current power source portion including a zener diode for generating a direct current power source;
a reference value generating portion for generating a reference value for controlling constant the input current from the direct current power source generated by the direct current power source portion; and
a control portion for calculating a difference between the reference value and a value of the input current based on the reference value generated by the reference value generating portion and controlling the inverter portion by adding the difference between the reference value and the input current value at least above a printed board, wherein the shunt resistor is provided with a temperature characteristic the same as or proximate to a temperature characteristic of the zener diode. - View Dependent Claims (18, 19)
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Specification