Light-emitting device and method of manufacturing the same

• US 20060226431A1
• Filed: 06/12/2006
• Published: 10/12/2006
• Est. Priority Date: 10/21/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Jeong-wook, Cho, Jae-hee, Sung, Youn-joon, Paek, Ho-sun
• Granted Patent: US 7,759,140 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

Claims

1-6. -6. (canceled)

7. A method of manufacturing a light-emitting device comprising:

forming at least one protruded portion with a curved surface on a planarized substrate; and

forming semiconductor crystal layers including active layers, on the substrate.

8. The method of claim 7 further comprising, before the forming the at least one protruded portion:

patterning a photo resist formed on the substrate;

hard baking the photo resist and the substrate; and

etching the surface of the substrate, thereby forming at least one protruded portion.

9. The method of claim 8, wherein, when etching the substrate surface, an etching gas is a Cl gas selected from the group consisting of Cl₂, BCl₃, HCl, CCl₄, and SiCl₄.

10. A method of manufacturing a light-emitting device comprising:

forming at least one protruded portion with a curved surface on a substrate; and

growing group III nitride compound semiconductor crystal layers from the substrate surface between the protruded portions until the surface of the protruded portions is covered.

11. The method of claim 10, wherein each surface of the protruded portions has a different crystal direction from that of a (0001) surface.

12. The method of claim 10, wherein the growing is epitaxial growing.