Nitride-based semiconductor light emitting device and manufacturing method thereof

• US 20060226434A1
• Filed: 04/12/2006
• Published: 10/12/2006
• Est. Priority Date: 04/12/2005
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hata, Toshio
• Application Number:
  US11/403,511
• Publication Number:
  US 20060226434A1
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A present nitride-based semiconductor light emitting device includes: a pattern surface formed on a conductive substrate; a multilayered metal layer formed on the pattern surface; and a multilayered semiconductor layer formed on the multilayered metal layer, and characterized in that main surfaces of the multilayered metal layer and the multilayered semiconductor layer have smaller area than the pattern surface has, and the multilayered semiconductor layer includes a p type nitride-based semiconductor layer, a light emitting layer and an n type nitride-based semiconductor layer. Thus, a highly reliable nitride-based semiconductor light emitting device with excellent adhesion between a nitride-based semiconductor layer and a conductive substrate, and a manufacturing method thereof are provided.

Claims

1. A nitride-based semiconductor light emitting device, comprising:

a pattern surface formed on a conductive substrate;

a multilayered metal layer formed on said pattern surface; and

a multilayered semiconductor layer formed on said multilayered metal layer, wherein

a main surface of said multilayered metal layer and a main surface of said multilayered semiconductor layer have smaller area than said pattern surface has, and

said multilayered semiconductor layer includes a p type nitride-based semiconductor layer, a light emitting layer and an n type nitride-based semiconductor layer.

2. The nitride-based semiconductor light emitting device according to claim 1, wherein

a side surface of said light emitting layer is formed along a surface including a side surface of said multilayered metal layer and a side surface of said multilayered semiconductor layer.

3. The nitride-based semiconductor light emitting device according to claim 1, wherein

said conductive substrate is formed by at least one selected from the group consisting of Si, GaAs, GaP, InP, and Ge, and has a convex pattern surface.

4. The nitride-based semiconductor light emitting device according to claim 1, wherein

a base substrate is stacked on said multilayered semiconductor layer directly or via an intermediate layer, and

said base substrate is formed by at least one selected from the group consisting of sapphire, spinel, lithium niobate, SiC, Si, ZnO, and GaAs.

5. The nitride-based semiconductor light emitting device according to claim 4, wherein

said intermediate layer is a nitride-based buffer layer.

6. The nitride-based semiconductor light emitting device according to claim 5, wherein

said nitride-based buffer layer has conductivity.

7. The nitride-based semiconductor light emitting device according to claim 5, wherein

to said nitride-based buffer layer, at least 10¹³ cm⁻

3 and at most 10²⁰ cm<sup>−

3</sup> of Si is added as dopant.

8. A manufacturing method of a nitride-based semiconductor light emitting device, comprising the steps of:

forming, on a base substrate directly or via an intermediate layer, a multilayered semiconductor layer including an n type nitride-based semiconductor layer, a light emitting layer and a p type nitride-based semiconductor layer, and forming a semiconductor-side multilayered metal layer on said multilayered semiconductor layer;

forming a pattern surface on a conductive substrate, and forming on said pattern surface a substrate-side multilayered metal layer having a main surface that has smaller area than said pattern surface has; and

bonding said semiconductor-side multilayered metal layer and said substrate-side multilayered metal layer so that respective bonding metal layers are joined.

9. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 8, wherein

said base substrate is formed by at least one selected from the group consisting of sapphire, spinel, lithium niobate, SiC, Si, ZnO, and GaAs.

10. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 8, wherein

said intermediate layer is a nitride-based buffer layer.

11. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 10, wherein

said nitride-based buffer layer has conductivity.

12. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 10, wherein

to said nitride-based buffer layer, at least 10¹³ cm⁻

3 and at most 10²⁰ cm<sup>−

3</sup> of Si is added as dopant.

13. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 8, wherein

in said step of bonding said semiconductor-side multilayered metal layer and said substrate-side multilayered metal layer, respective bonding metal layers are joined using eutectic bonding for metal.

14. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 8, wherein

in said step of bonding said semiconductor-side multilayered metal layer and said substrate-side multilayered metal layer, respective bonding metal layers are joined using room temperature bonding for metal.

15. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 8, further comprising

a base substrate separating step of separating said base substrate from said multilayered semiconductor layer.

16. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 15, further comprising

an unbonded region separating step of separating a region in said multilayered semiconductor layer and said semiconductor-side multilayered metal layer to which said substrate-side multilayered metal layer is not bonded from a region in said multilayered semiconductor layer and said semiconductor-side multilayered metal layer to which said substrate-side multilayered metal layer is bonded.

17. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 16, wherein

said base substrate separating step and said unbonded region separating step are performed simultaneously.

18. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 17, wherein

said base substrate separating step and said unbonded region separating step are performed simultaneously by applying laser light irradiation from a base substrate side.

19. The manufacturing method of a nitride-based semiconductor light emitting device according to claim 8, further comprising a step of

providing a scribe line from a back surface of said conductive substrate opposite to a pattern groove formed in said conductive substrate to divide said conductive substrate into chips.