Bi-directional transistor and method therefor
First Claim
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1. A bi-directional transistor comprising:
- a first MOS transistor having a body region, a first current carrying electrode, and a second current carrying electrode; and
a switch configured to selectively couple the body region of the first MOS transistor to the first current carrying electrode or the second current carrying electrode of the first MOS transistor responsively to signals applied to the source and the drain of the first MOS transistor.
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Abstract
In one embodiment, a transistor is formed to conduct current in both directions through the transistor.
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Citations
20 Claims
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1. A bi-directional transistor comprising:
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a first MOS transistor having a body region, a first current carrying electrode, and a second current carrying electrode; and
a switch configured to selectively couple the body region of the first MOS transistor to the first current carrying electrode or the second current carrying electrode of the first MOS transistor responsively to signals applied to the source and the drain of the first MOS transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a bi-directional transistor comprising:
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forming a first MOS transistor on a semiconductor substrate of a first conductivity type;
forming a body region of the first MOS transistor on a surface of the semiconductor substrate and isolated from a first current carrying electrode region of the first MOS transistor by a first P-N junction and isolated from a second current carrying electrode region of the first MOS transistor by a second P-N junction; and
forming a second MOS transistor coupled to selectively couple the body region of the first MOS transistor to the first current carrying electrode of the first MOS transistor. - View Dependent Claims (11, 12, 13, 14)
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15. A method of forming a bi-directional transistor comprising:
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providing a semiconductor substrate of a first conductivity type;
forming a first doped region of a second conductivity type on a surface of the semiconductor substrate as a body region of a first transistor;
forming a second doped region of the first conductivity type within the first doped region and extending a first distance into the first doped region as a first current carrying electrode region of the first transistor; and
forming a third doped region of the first conductivity type extending from the second doped region a second distance into the first doped region. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification