Use of deep-level transitions in semiconductor devices

• US 20060226440A1
• Filed: 05/23/2006
• Published: 10/12/2006
• Est. Priority Date: 09/04/2003
• Status: Abandoned Application

• Current Assignee: Yale University
• Original Assignee: Yale University
• Inventors: Pan, Janet L.
• Application Number:
  US11/440,326
• Publication Number:
  US 20060226440A1
• Time in Patent Office: Days
• US Class Current: 257/188
• CPC Class Codes: H01L 31/03042 characterised by the doping material
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or deep-level-to-deep-level) to achieve useful results. A principal aspect of the invention involves devices in which electrical transport occurs through a band of deep-level states and just the conduction band (or through a deep-level band and just the valence band), but where significant current does not flow through all three bands. This means that the deep-state is not acting as a nonradiative trap, but rather as an energy band through which transport takes place. Advantageously, the deep-level energy-band may facilitate a radiative transition, acting as either the upper or lower state of an optical transition.

Claims

1-231. -231. (canceled)

232. A semiconductor device, comprising:

a semiconductor host material, having a valence-band energy, E_V, a conduction-band energy, E_C, and an energy gap, E_G;

a deep-level region having one or more deep-level state(s) with energy at least 0.05 E_G above E_V and at least 0.05 E_G below E_C; and

, means for injecting carriers into the deep-level region to produce transition(s) between one or more of the deep-level state(s) and the conduction- or valence-band or another deep-level of the host material.

233. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by substitutional impurities.

234. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by a slow growth rate in the deep-level region.

235. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by nonstoichiometric (anion-rich or cation-rich) conditions within the deep-level region.

236. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by antisites in the deep-level region.

237. A semiconductor device, as defined in claim 232;

wherein the deep-level state(s) in the deep-level region are created, at least in part, by vacancies in the deep-level region.

238. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by interstitial species in the deep-level region.

239. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by dislocations in the deep-level region.

240. A semiconductor device, as defined in claim 232, wherein the deep-level state(s) in the deep-level region are created, at least in part, by complexes of two-or-more of (i) substitutional impurities, (ii) antisites, (iii) vacancies, (iv) interstitial species, and/or (v) dislocations in the deep-level region.

241. A semiconductor device, as defined in claim 232, wherein the deep-level region undergoes one or more heat treatments.

242. A semiconductor device, as defined in claim 232, wherein the host material is grown on a second semiconductor material.

243. A semiconductor device, as defined in claim 242, further comprising a plurality of monolithic devices in said second semiconductor material.

244. A semiconductor device, as defined in claim 232, wherein the injected carriers produce deep-level-to-valence-band transitions.

245. A semiconductor device, as defined in claim 232, wherein the injected carriers produce conduction-band-to-deep-level transitions.

246. A semiconductor device, as defined in claim 232, wherein the injected carriers produce deep-level-to-deep-level transitions.

247. A semiconductor device, as defined in claim 232, wherein the means for injecting carriers comprises an n-type region.

248. A semiconductor device, as defined in claim 232, wherein the means for injecting carriers comprises a p-type region.

249. A semiconductor device, as defined in claim 232, wherein the means for injecting carriers comprises a metallic region.

250. A semiconductor device, as defined in claim 232, wherein the means for injecting carriers comprises an oxide region.

251. A semiconductor device, as defined in claim 232, wherein the means for injecting carriers comprises a Schottky contact.