High-breakdown-voltage semiconductor device

• US 20060226504A1
• Filed: 06/09/2006
• Published: 10/12/2006
• Est. Priority Date: 03/25/2002
• Status: Active Grant

• Current Assignee: Takashi Shinohe, Tetsuo Hatakeyama
• Original Assignee: Takashi Shinohe, Tetsuo Hatakeyama
• Inventors: Shinohe, Takashi, Hatakeyama, Tetsuo
• Granted Patent: US 7,439,563 B2
• Time in Patent Office: Days
• US Class Current: 257/472
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0661 specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/7392 with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7722 using static field induced regions, e.g. SIT, PBT
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent ones of the trenches and having an impurity concentration higher than that of the semiconductor layer, a second region having opposite conductivity to the first regions and continuously disposed in a trench sidewall and bottom portion, a sidewall insulating film disposed on the second region of the trench sidewall, a third region disposed on the second region of the trench bottom portion and having the same conductivity as and the higher impurity concentration than the second region, a fourth region disposed on the back surface of the semiconductor layer, a first electrode formed on each first region, a second electrode connected to the third region, and a third electrode formed on the fourth region.

Claims

1-15. -15. (canceled)

16. A high-breakdown-voltage semiconductor device comprising:

a high-resistance semiconductor layer of a first conductivity type having a first main surface and a second main surface, a plurality of first trenches being formed on the first main surface of the high-resistance semiconductor layer in a longitudinal plane shape and in parallel with each other;

a plurality of first semiconductor regions of the second conductivity type formed on the first main surface of the high-resistance semiconductor layer, each of the plurality of first semiconductor regions being sandwiched between adjacent trenches of the plurality of first trenches, and having an impurity concentration higher than that of the high-resistance semiconductor layer;

a second semiconductor region of the first conductivity type disposed in at least a bottom portion of each of the plurality of first trenches and having an impurity concentration higher than that of the high-resistance semiconductor layer;

a sidewall insulating film disposed on the sidewall of each of the plurality of first trenches;

a third semiconductor region of the second conductivity type buried in the high-resistance semiconductor layer, a part of an upper surface thereof contacting a lower surface of the second semiconductor region and horizontally extending under the second semiconductor region to terminate below the first semiconductor region;

a fourth semiconductor region disposed on the second main surface of the high-resistance semiconductor layer, and having an impurity concentration higher than that of the high-resistance semiconductor layer;

a first electrode formed on each of the plurality of first semiconductor regions;

a second electrode formed on the second semiconductor region;

a third electrode formed on the third semiconductor region and in contact with a surface thereof; and

a fourth electrode formed on the fourth semiconductor region.

17. The high-breakdown-voltage semiconductor device according to claim 16, further comprising an electric field relaxation layer disposed in an edge termination region of the high-breakdown-voltage semiconductor device surrounding the plurality of first semiconductor regions.

18. The high-breakdown-voltage semiconductor device according to claim 16, wherein the high-resistance semiconductor layer and the first semiconductor region to the fourth semiconductor regions region are formed of silicon carbide.

19. The high-breakdown-voltage semiconductor device according to claim 16, wherein the fourth semiconductor region has the first conductivity type, and the high-breakdown-voltage semiconductor device is a static induction transistor in which the first electrode is a gate electrode, the second electrode is a source electrode, and the fourth electrode is a drain electrode.

20. The high-breakdown-voltage semiconductor device according to claim 16, wherein the fourth semiconductor region has the second conductivity type, and the high-breakdown-voltage semiconductor device is a static induction thyristor in which the first electrode is a gate electrode, the second electrode is an emitter electrode, and the fourth electrode is a collector electrode.

21. The high-breakdown-voltage semiconductor device according to claim 16, wherein the third electrode is connected to the second electrode.

22. A high-breakdown-voltage semiconductor device comprising:

a high-resistance semiconductor layer of a first conductivity type having a first main surface and a second main surface;

a first semiconductor region of a second conductivity type selectively formed on the first main surface of the high-resistance semiconductor layer,

a second semiconductor region of the second conductivity type selectively formed on the first semiconductor region;

a gate electrode insulatively formed on the second semiconductor region;

a third semiconductor region of the first conductivity type formed on the first semiconductor region along one side of the gate electrode;

a fourth semiconductor region of the first conductivity type formed on the first semiconductor region along the other side of the gate electrode and connected to the high-resistance semiconductor layer at an end portion of the first semiconductor region situated on the other side of the gate electrode;

a fifth semiconductor region disposed on the second main surface of the high-resistance semiconductor layer, and having an impurity concentration higher than that of the high-resistance semiconductor layer;

a first electrode formed on the gate electrode;

a second electrode formed on the first semiconductor region;

a third electrode formed on the third semiconductor region; and

a fourth electrode formed on the fifth semiconductor region.

23. The high-breakdown-voltage semiconductor device according to claim 22, further comprising a sidewall insulating film disposed on the sidewall of the gate electrode, which separates the gate electrode and the third electrode.

24. The high-breakdown-voltage semiconductor device according to claim 22, further comprising an electric field relaxation layer in contact with the first semiconductor region and disposed in an edge termination region of the high-breakdown-voltage semiconductor device.

25. The high-breakdown-voltage semiconductor device according to claim 22, wherein the high-resistance semiconductor layer and the first semiconductor region to the fifth semiconductor region are formed of silicon carbide.

26. The high-breakdown-voltage semiconductor device according to claim 22, wherein the fifth semiconductor region has the first conductivity type, and the high-breakdown-voltage semiconductor device is a MOS transistor in which the first electrode is a gate electrode, the second electrode is a source electrode, and the fourth electrode is a drain electrode.

27. The high-breakdown-voltage semiconductor device according to claim 22, wherein the fifth semiconductor region has the second conductivity type, and the high-breakdown-voltage semiconductor device is an insulated gate bipolar transistor in which the first electrode is a gate electrode, the second electrode is an emitter electrode, and the fourth electrode is a collector electrode.

28. The high-breakdown-voltage semiconductor device according to claim 22, wherein the second electrode is connected to the third electrode.