Integrated circuit transformer devices for on-chip millimeter-wave applications
First Claim
Patent Images
1. An integrated circuit transformer, comprising:
- a substrate;
a ground shield formed on the substrate;
a primary conductor comprising an elongated conductive strip; and
a secondary conductor comprising an elongated conductive strip;
wherein the primary conductor and the secondary conductor are aligned to form a coupled-wire structure that is disposed adjacent to the ground shield; and
wherein the ground shield comprises a pattern of close-ended parallel elongated slots that are disposed orthogonal to the primary and secondary conductors, and wherein the ground shield comprises edge regions that provide current return paths that are collinear to the primary and secondary conductors.
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Abstract
Methods are provided for building integrated circuit transformer devices having compact and optimized architectures for use in MMW (millimeter-wave) applications. The integrated circuit transformer devices have universal and scalable architectures that can be used as templates or building blocks for constructing various types of on-chip devices for millimeter-wave applications.
21 Citations
26 Claims
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1. An integrated circuit transformer, comprising:
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a substrate;
a ground shield formed on the substrate;
a primary conductor comprising an elongated conductive strip; and
a secondary conductor comprising an elongated conductive strip;
wherein the primary conductor and the secondary conductor are aligned to form a coupled-wire structure that is disposed adjacent to the ground shield; and
wherein the ground shield comprises a pattern of close-ended parallel elongated slots that are disposed orthogonal to the primary and secondary conductors, and wherein the ground shield comprises edge regions that provide current return paths that are collinear to the primary and secondary conductors. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor IC (integrated circuit) chip, comprising:
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an integrated circuit comprising a transformer, wherein the transformer comprises;
a ground shield;
a primary conductor comprising at least one elongated conductive strip;
a secondary conductor comprising at least one elongated conductive strip;
wherein the primary conductor and the secondary conductor are aligned to form a coupled-wire structure that is disposed adjacent to the ground shield; and
wherein the ground shield comprises a pattern of close-ended parallel elongated slots that are disposed orthogonal to the primary and secondary conductors, and edge regions that provide current return paths that are collinear to the primary and secondary conductors. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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- 20. A method of fabricating a semiconductor device, comprising forming a ground shield, a primary conductor and a secondary conductor, wherein forming the ground shield comprises patterning a layer of conductive material to form close-ended parallel elongated slots that are disposed orthogonal to the primary and secondary conductors, and edge regions that provide current return paths collinear to the primary and secondary conductors.
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23. A computer implemented method for integrated ciruit design and simulation, comprising:
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generating a virtual model of a circuit using a model for each component of the circuit, wherein at least one model comprises a lumped equivalent circuit representation of an integrated circuit transformer structure having stacked primary and secondary conductors over a groud planewith, in which conductor length is a user-specified parameter;
performing a simulation of the circuit based on one or more user-specified parameter values for conductor length; and
presenting results of the simulation. - View Dependent Claims (24, 25, 26)
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Specification