Magneto-resistance effect element and magnetic memory

• US 20060227465A1
• Filed: 09/19/2005
• Published: 10/12/2006
• Est. Priority Date: 03/22/2005
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Saito, Yoshiaki, Inokuchi, Tomoaki, Sugiyama, Hideyuki
• Granted Patent: US 7,663,171 B2
• Time in Patent Office: Days
• US Class Current: 360/324.100
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H01F 10/3231 via a non-magnetic spacer
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3281 only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.

Claims

1. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is fixed;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

when the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au;

when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and

when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.

2. A magneto-resistance effect element according to claim 1, wherein

when the non-magnetic layer includes at least one element selected from the group consisting of Ag and Au, the second magnetization pinned layer is made of one of Co—

Fe alloy, Co—

Ni alloy, and Fe—

Ni alloy, and

when the non-magnetic layer includes Rh, material for the second magnetization pinned layer is made of Co—

Fe alloy.

3. A magneto-resistance effect element according to claim 1, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

18. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 1;

a first, wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

4. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

when the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Mn, V, and R;

when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Ir and Rh; and

when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including Mn.

5. A magneto-resistance effect element according to claim 4, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

19. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 4;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

6. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

the non-magnetic layer includes Cr; and

the second magnetization pinned layer has one of the following compositions

0.5≦

x≦

1;

Co_XFe_1-X,
0≦

y≦

1;

Co_yNi_1-y, and
0≦

z≦

0.475;

Fe_ZNi_1-Z.

7. A magneto-resistance effect element according to claim 6, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

20. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 6;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

8. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

the non-magnetic layer includes Ir; and

the second magnetization pinned layer has one of the following compositions

0.3≦

x≦

1;

Co_XFe_1-X,
0≦

y≦

1;

Co_yNi_1-y, and
0≦

z≦

0.7;

Fe_ZNi_1-Z.

9. A magneto-resistance effect element according to claim 8, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

21. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 8;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

10. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

the non-magnetic layer includes Mn; and

the second magnetization pinned layer has one of the following composition

0≦

x≦

0.64;

Co_XFe_1-X, and
0.4≦

z≦

1.0;

Fe_ZNi_1-Z.

11. A magneto-resistance effect element according to claim 10, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

22. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 10;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

12. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

the non-magnetic layer includes V; and

the second magnetization pinned layer has one of the following compositions

0≦

x≦

0.64;

Co_XFe_1-X, and
0.375≦

z≦

1.0;

Fe_ZNi_1-Z.

13. A magneto-resistance effect element according to claim 12, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

23. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 12;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

14. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

the non-magnetic layer includes Rh; and

the second magnetization pinned layer has one of the following compositions

0≦

x≦

0.62;

Co_XNi_1-X, and
0≦

z≦

0.63;

Fe_ZNi_1-Z.

15. A magneto-resistance effect element according to claim 14, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

24. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 14;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.

16. A magneto-resistance effect element comprising:

a first magnetization pinned layer whose direction of magnetization is pinned;

a magnetization free layer whose direction of magnetization is variable;

a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;

a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially parallel to the direction of magnetization of the first magnetization pinned layer, and;

a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,

a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein

the non-magnetic layer includes Ru; and

the second magnetization pinned layer has one of the following compositions

0≦

x≦

1.0;

Co_XNi_1-X, and
0≦

z≦

0.8;

Fe_ZNi_1-Z.

17. A magneto-resistance effect element according to claim 16, wherein the magnetization free layer is a layer having at least one ferromagnetic particles isolated by dielectric or insulator, or a layer having a column-shaped structure made of ferromagnetic material surrounded by dielectric or insulator.

25. A magnetic memory comprising:

a memory cell having the magneto-resistance effect element according to claim 16;

a first wiring electrically connected with one end of the magneto-resistance effect element; and

a second wiring electrically connected with the other end of the magneto-resistance effect element.