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Vicinal gallium nitride substrate for high quality homoepitaxy

  • US 20060228584A1
  • Filed: 05/11/2006
  • Published: 10/12/2006
  • Est. Priority Date: 11/14/2003
  • Status: Active Grant
First Claim
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1. A GaN substrate including a GaN (0001) surface offcut from the <

  • 0001>

    direction predominantly towards a direction selected from the group consisting of <

    10{overscore (1)}0> and

    <

    11{overscore (2)}0>

    directions, at an offcut angle in a range that is from 2 to 5 degrees, wherein said surface has a RMS roughness measured by 50×

    50 μ

    m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm

    2
    .

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