Tri-gate devices and methods of fabrication
0 Assignments
0 Petitions
Accused Products
Abstract
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
-
Citations
72 Claims
-
1-65. -65. (canceled)
-
66. A method of forming a semiconductor device comprising:
-
forming a semiconductor body having a top surface and laterally opposite sidewalls;
altering said laterally opposite sidewalls of said semiconductor body to enhance the oxidation rate of said sidewalls of said semiconductor body; and
growing an oxide on said sidewalls of said semiconductor body and on the top surface of said semiconductor body wherein the thickness of said oxide on said sidewalls of said semiconductor body is greater than the thickness of said oxide on said top surface of said semiconductor body. - View Dependent Claims (67, 68)
-
-
69. A method of forming a semiconductor device comprising:
-
forming a semiconductor body having a top surface and laterally opposite sidewalls on a substrate;
altering the top surface of said semiconductor body to impede the oxidation rate of said top surface of said semiconductor body;
oxidizing said top surface of said semiconductor body and said laterally opposite sidewalls of said semiconductor body wherein the thickness of said oxide on said top surface of said semiconductor body is greater than the thickness of said oxide on said sidewalls of said semiconductor body; and
forming a gate electrode on said gate dielectric on said top surface of said semiconductor body and adjacent to said gate dielectric on said laterally opposite sidewalls of said semiconductor body. - View Dependent Claims (70, 71)
-
-
72-77. -77. (canceled)
Specification