Isolation region formation that controllably induces stress in active regions
First Claim
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1. A method of forming an isolation structure, comprising:
- forming an isolation trench in a semiconductor substrate;
forming a first layer of dielectric material over the semiconductor substrate and down into the isolation trench;
forming a second layer of dielectric material over the first layer of dielectric material;
annealing the substrate and the first and second layers of dielectric material; and
removing excess amounts of the first and second layers of dielectric material, where the annealing process causes the first layer of dielectric material to contract and thereby exert a tensile stress on one or more active regions of the semiconductor substrate that surround the isolation structure.
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Abstract
A method (10) of forming an isolation structure (140, 142) in a semiconductor substrate (102) is disclosed, wherein the isolation structure (140, 142) can be formed in a controlled manner so as to regulate stresses exerted by the structure on one or more active regions (106) of the substrate (102) located adjacent to the structure (140, 142).
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20 Claims
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1. A method of forming an isolation structure, comprising:
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forming an isolation trench in a semiconductor substrate;
forming a first layer of dielectric material over the semiconductor substrate and down into the isolation trench;
forming a second layer of dielectric material over the first layer of dielectric material;
annealing the substrate and the first and second layers of dielectric material; and
removing excess amounts of the first and second layers of dielectric material, where the annealing process causes the first layer of dielectric material to contract and thereby exert a tensile stress on one or more active regions of the semiconductor substrate that surround the isolation structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An isolation structure formed within a semiconductor substrate adjacent to an active region of the semiconductor substrate, the isolation structure comprising:
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a first layer of dielectric material formed within an isolation trench formed within the semiconductor substrate adjacent to the active region; and
a second layer of dielectric material formed over the first layer of dielectric material, where the first layer of dielectric material exerts a tensile stress on the active region. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification