Atomic layer deposition of high k metal silicates

• US 20060228888A1
• Filed: 08/18/2003
• Published: 10/12/2006
• Est. Priority Date: 08/18/2002
• Status: Abandoned Application

• Current Assignee: Avid Technology Incorporated, Integrated Process Systems Ltd.
• Original Assignee: Avid Technology Incorporated, Integrated Process Systems Ltd.
• Inventors: Lee, Sang-In, Senzaki, Yoshihide, Lee, Sang-Kyoo
• Application Number:
  US10/525,122
• Publication Number:
  US 20060228888A1
• Time in Patent Office: Days
• US Class Current: 438/681
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02153 the material containing titanium, e.g. TiSiOx
• CPC Class Codes: H01L 21/02159 the material containing zirconium, e.g. ZrSiOx
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2

Abstract

The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.

Claims

1. A method of growing a metal silicate film on a substrate by atomic layer deposition comprising:

(i) introducing a metal organic precursor and a silicon organic precursor into a reaction chamber containing a substrate;

(ii) purging the reaction chamber;

(iii) introducing ozone into the reaction chamber;

(iv) purging the reaction chamber; and

(v) repeating steps (i), (ii), (iii) and (iv) until a film of a target thickness is achieved on the substrate.

2. The method of claim 1, wherein the substrate is silicon.

3. The method of claim 1, wherein the metal in the metal organic precursor is a Group 4 metal.

4. The method of claim 1, wherein the metal in the metal organic precursor is hafnium.

5. The method of claim 1, wherein the metal organic precursor is a linear, branched and cyclic alkyl.

6. The method of claim 1, wherein the metal organic precursor is a metal alkyl amide.

7. The method of claim 1, wherein the silicon organic precursor is a silicon alkyl amide.

8. The method of claim 1, wherein the metal organic precursor is a metal alkoxide.

9. The method of claim 1, wherein the metal organic precursor and the silicon organic precursor are mixed, volatilized, and introduced into the chamber as a mixed gas.

10. The method of claim 1, wherein the metal organic precursor and the silicon organic precursor are volatilized separately and introduced into the chamber concurrently.

11. The method of claim 1, wherein the metal organic precursor and the silicon organic precursor are volatilized separately and introduced into the chamber consecutively.

12. A method of forming a gate for a transistor comprising:

(i) introducing a metal organic precursor and a silicon organic precursor into a reaction chamber containing a substrate;

(ii) purging the reaction chamber;

(iii) introducing ozone into the reaction chamber;

(iv) purging the reaction chamber;

(v) repeating steps (i), (ii), (iii) and (iv) until a dielectric film of a target thickness is achieved on the substrate; and

(vi) placing a conductive film over the dielectric film.

13. The method of claim 12, wherein the substrate is silicon.

14. The method of claim 12, wherein the metal organic precursor is a linear, branched, and cyclic amide of Group 4 metal and wherein the silicon organic precursor is a silicon donating organic material.

15. The method of claim 12, wherein the metal organic precursor is a metal alkyl amide of a Group 4 metal, and wherein the silicon organic precursor is a silicon alkyl amide.

16. The method of claim 12, wherein the metal organic precursor and the silicon organic precursor are mixed, volatilized, and introduced into the chamber as a mixed gas.

17. The method of claim 12, wherein the metal organic precursor and the silicon organic precursor are volatilized separately and introduced into the chamber concurrently.

18. The method of claim 12, wherein the metal organic precursor and the silicon organic precursor are volatilized separately and introduced into the chamber consecutively.

19. A method of forming a capacitor comprising:

(i) introducing a metal organic precursor and a silicon organic precursor into a reaction chamber containing a substrate;

(ii) purging the reaction chamber;

(iii) introducing ozone into the reaction chamber;

(iv) purging the reaction chamber;

(v) repeating steps (i), (ii), (iii) and (iv) until a dielectric film of a target thickness is achieved on the substrate; and

(vi) positioning the film between two electrodes.

20. The method of claim 19, wherein the substrate is one of the two electrodes.

21. The method of claim 19, wherein the metal organic precursor is a linear, branched and cyclic amide of Group 4 metal and wherein the silicon organic precursor is a silicon donating organic material.

22. The method of claim 19, wherein the metal organic precursor is a metal alkyl amide of a Group 4 metal, and wherein the silicon organic precursor is a silicon alkyl amide.

23. The method of claim 19, wherein the metal organic precursor and the silicon organic precursor are mixed, volatilized, and introduced into the chamber as a mixed gas.

24. The method of claim 19, wherein the metal organic precursor and the silicon organic precursor are volatilized separately and introduced into the chamber concurrently.

25. The method of claim 19, wherein the metal organic precursor and the silicon organic precursor are volatilized separately and introduced into the chamber consecutively.