Methods of removing resist from substrates in resist stripping chambers
First Claim
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1. A method of stripping resist from a semiconductor substrate in a resist stripping chamber, comprising:
- providing a semiconductor substrate in a resist stripping chamber, the semiconductor substrate including a low-k dielectric material and a resist layer overlying the low-k dielectric material, the low-k dielectric material having a thermal degradation temperature;
producing a remote plasma from a process gas and supplying therefrom a gas containing reactive species at a temperature above the thermal degradation temperature of the low-k dielectric material into the resist stripping chamber;
cooling the reactive species in the plasma stripping chamber to a temperature below the thermal degradation temperature of the dielectric material; and
stripping the resist layer from the semiconductor substrate with the cooled reactive species such that the semiconductor substrate does not exceed the thermal degradation temperature of the low-k dielectric material.
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Abstract
Methods for stripping resist from a semiconductor substrate in a resist stripping chamber are provided. The methods include producing a remote plasma containing reactive species and cooling the reactive species inside the chamber prior to removing the resist with the reactive species. The reactive species can be cooled by being passed through a thermally-conductive gas distribution member. By cooling the reactive species, damage to a low-k dielectric material on the substrate can be avoided.
232 Citations
26 Claims
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1. A method of stripping resist from a semiconductor substrate in a resist stripping chamber, comprising:
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providing a semiconductor substrate in a resist stripping chamber, the semiconductor substrate including a low-k dielectric material and a resist layer overlying the low-k dielectric material, the low-k dielectric material having a thermal degradation temperature;
producing a remote plasma from a process gas and supplying therefrom a gas containing reactive species at a temperature above the thermal degradation temperature of the low-k dielectric material into the resist stripping chamber;
cooling the reactive species in the plasma stripping chamber to a temperature below the thermal degradation temperature of the dielectric material; and
stripping the resist layer from the semiconductor substrate with the cooled reactive species such that the semiconductor substrate does not exceed the thermal degradation temperature of the low-k dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of stripping resist from a semiconductor substrate in a resist stripping chamber, comprising:
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providing a semiconductor substrate in a resist stripping chamber, the semiconductor substrate including an organic low-k dielectric material and a resist layer overlying the low-k dielectric material, the low-k dielectric material having a thermal degradation temperature;
producing a remote plasma from a process gas and supplying therefrom a gas containing reactive species at a temperature above the thermal degradation temperature of the low-k dielectric material into the resist stripping chamber;
passing the reactive species through flow passages of a thermally-conductive gas distribution member facing the semiconductor substrate, thereby cooling the reactive species to a temperature below the thermal degradation temperature of the low-k dielectric material; and
stripping the resist layer from the semiconductor substrate with the cooled reactive species such that the semiconductor substrate does not exceed the thermal degradation temperature of the low-k dielectric material. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of stripping resist from a semiconductor substrate in a resist stripping chamber, comprising:
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supporting a semiconductor substrate on a support surface in a resist stripping chamber, the semiconductor substrate including a resist layer overlying an organic low-k dielectric material having a thermal degradation temperature;
heating the support surface to a temperature below the thermal degradation temperature of the low-k dielectric material;
applying energy to a process gas using a microwave energy source to produce a remote plasma and supplying reactive species therefrom at a temperature above the thermal degradation temperature of the low-k dielectric material into the resist stripping chamber;
cooling the reactive species to a temperature below the thermal degradation temperature of the low-k dielectric material inside the resist stripping chamber; and
removing the resist layer from the semiconductor substrate with the cooled reactive species such that the semiconductor substrate does not exceed the thermal degradation temperature of the low-k dielectric material. - View Dependent Claims (25, 26)
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Specification