Rapid thermal processing using energy transfer layers

• US 20060228897A1
• Filed: 04/08/2005
• Published: 10/12/2006
• Est. Priority Date: 04/08/2005
• Status: Active Grant

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area), BeiJing E-Town Semiconductor Technology Co., Ltd.
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Timans, Paul J.
• Granted Patent: US 7,642,205 B2
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.

Claims

1. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for heat treating said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying an energy transfer layer to at least a portion of said wafer;

exposing said wafer to an energy source in said process chamber in a way which subjects the wafer to a thermal profile having at least a first elevated temperature event and such that said energy transfer layer influences at least one part of the thermal profile; and

in time relation to said thermal profile, removing said energy transfer layer in said process chamber at least sufficiently for subjecting the wafer to a subsequent step.

2. The method of claim 1 wherein said energy transfer layer serves to absorb an emitted energy from said energy source.

3. The method of claim 1 wherein at least an initial portion of said exposing subjects said wafer to an inert gas ambient and said removing is initiated by introducing a reactive gas ambient into said process chamber.

4. The method of claim 3 wherein said reactive gas ambient is selected as at least one member of the group consisting of oxygen containing gases and halogen containing gases.

5. The method of claim 1 wherein said energy transfer layer is oxidizable and wherein removing includes causing said energy transfer layer to oxidize in cooperation with said exposing.

6. The method of claim 5 wherein applying includes providing carbon in said energy transfer layer.

7. The method of claim 6 wherein applying includes initially forming a film of a carbon containing compound and, thereafter, treating said film to increase a fractional carbon content thereof to form said energy transfer layer prior to said exposing.

8. The method of claim 1 wherein removing includes transforming said energy transfer layer to an intermediate form and, thereafter, dispersing the intermediate form of the energy transfer layer from the wafer sufficient for subjecting the wafer to said subsequent step.

9. The method of claim 1 wherein coating includes depositing said energy transfer layer at least on said portion of the wafer with the wafer in said process chamber.

10. The method of claim 1 wherein removing is performed using a chemical reaction with said energy transfer layer which is exothermic so as to contribute heat to said thermal profile.

11. The method of claim 10 wherein said chemical reaction contributes a pulse of thermal energy to said thermal profile.

12. The method of claim 10 wherein said energy transfer layer includes carbon and removing includes introducing a gaseous reactant into said process chamber such that said chemical reaction occurs between said carbon and the gaseous reactant.

13. The method of claim 1 wherein said removing proceeds automatically when a predetermined temperature is reached during said thermal profile.

14. The method of claim 1 wherein removing is performed responsive to said first elevated temperature event.

15. The method of claim 1 wherein said thermal profile includes a drop in temperature of said wafer subsequent to said first elevated temperature event and, thereafter, an additional elevated temperature event is produced and said removing is performed responsive to said additional elevated temperature event.

16. The method of claim 1 including patterning said energy transfer layer in a way which enhances said removing.

17. The method of claim 1 wherein said wafer includes a pair of opposing major sides and wherein applying includes covering at least a first area of at least one side of said wafer with said energy transfer layer in a way which changes a distribution of stress in the wafer.

18. The method of claim 17 wherein a second area of an opposing side of said wafer is covered with said energy transfer layer to further change said distribution of stress in the wafer.

19. The method of claim 1 wherein said wafer exhibits a given deformation and stress behavior as a result of responding to said energy source arrangement without said energy transfer layer and said wafer exhibits a modified deformation and stress behavior as a result of responding to said energy source arrangement in the presence of said energy transfer layer such that the modified deformation and stress behavior enhances survivability of the wafer as compared to said given deformation and stress behavior.

20. In an overall multi-step technique for processing a semiconductor wafer, an intermediate condition of said wafer that is useful for heat treating said wafer in a process chamber as part of the overall multi-step technique, said intermediate condition of the wafer comprising:

a material layer temporarily applied to at least a portion of said wafer such that exposing said wafer to an energy source in said process chamber subjects the wafer to a thermal profile having at least a first elevated temperature event and such that said material layer influences at least one part of the thermal profile by undergoing a reaction in a predetermined way at least as the material layer is removed from the wafer so as to be substantially absent from a target structure being formed on said wafer.

21. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for heat treating said wafer as an intermediate part of the overall multi-step technique in which the wafer is exposed to an energy source arrangement, said method comprising:

applying a material layer temporarily to at least one portion of said wafer such that the material layer exhibits a given response to said energy source arrangement;

subjecting at least said material layer to a stream containing an energetic species such that the material layer thereafter exhibits a modified response to the energy source arrangement;

exposing said wafer including the material layer having the modified response to said energy source arrangement to perform said heat treating; and

removing said material layer.

22. The method of claim 21 including using ion implantation during said exposing such that ions are implanted into said material layer as said energetic species.

23. The method of claim 21 wherein said modified response enhances absorption of energy produced by said energy source arrangement, as compared to said given response of the material layer.

24. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for heat treating said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying a first material layer to at least a portion of said wafer; and

subjecting said first material layer to a second material in cooperation with exposing said first material to an energy source in said process chamber in a way which causes the first material layer to react with the second material so as to generate heat which induces a temperature rise of said wafer.

25. The method of claim 24 wherein said second material is provided in a gaseous form in the process chamber for reaction with the first material.

26. The method of claim 24 wherein said second material is applied to an area of said wafer, after the application of said first material layer, to cooperate with the first material layer on said portion of the wafer to produce said reaction.

27. The method of claim 26 wherein the area covered by said second material at least overlies the first material layer.

28. The method of claim 24 wherein said reaction includes decomposing the first material layer to produce at least two reactant by-product compounds.

29. The method of claim 24 wherein said temperature rise contributes, at least in part, to a desired material transformation of the wafer.

30. The method of claim 29 wherein said desired material transformation includes annealing an ion implanted layer previously formed during the overall technique.

31. In an overall multi-step technique for processing a semiconductor wafer, a method that is performed for heat treating said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

applying a material layer to at least a portion of said wafer; and

exposing said material layer to an energy source in said process chamber in a way which causes the material layer to decompose into at least two by-products thereby releasing thermal energy.