Hard mask arrangement

• US 20060234138A1
• Filed: 03/30/2006
• Published: 10/19/2006
• Est. Priority Date: 09/30/2003
• Status: Abandoned Application

• Current Assignee: Helmut Tews, Rodger Fehlhaber
• Original Assignee: Helmut Tews, Rodger Fehlhaber
• Inventors: Tews, Helmut, Fehlhaber, Rodger
• Application Number:
  US11/393,017
• Publication Number:
  US 20060234138A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask

Abstract

An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.

Claims

1. A method for the production of a hard mask, comprising

applying a photoresist layer on a substrate;

patterning the photoresist layer;

applying a hard mask layer to the patterned photoresist layer using an atomic layer epitaxy technique;

removing a portion of the hard mask layer, a corresponding portion of the patterned photoresist layer being uncovered; and

removing the uncovered patterned photoresist layer.

2. The method of claim 1, where the hard mask layer comprises silicon dioxide.

3. The method of claim 1, where the hard mask layer comprises aluminum oxide.

4. The method of claim 1, comprising removing the portion of the hard mask layer using an anisotropic etching technique.

5. The method of claim 4, comprising removing the portion of the hard mask layer using an anisotropic dry etching technique.

6. The method of claim 4, comprising removing the portion of the hard mask layer using a reactive ion etching technique.

7. The method of claim 1, comprising removing a second portion of the hard mask layer after removal of the patterned photoresist layer.

8. The method of claim 7, where removing the second portion of the hard mask layer comprises trimming a hard mask layer remaining after the removal of the patterned photoresist layer.

9. The method of claim 1, comprising applying a second hard mask layer to the hard mask layer after the removal of the patterned photoresist layer.

10. The method of claim 9, where the hard mask layer comprises aluminum oxide.

11. The method of claim 10, comprising forming the second hard mask layer from silicon dioxide.

12. The method of claim 11, where the hard mask layer is formed from one of zirconium oxide, hafnium oxide, an oxide of a rare earth material, or an oxide of a lanthanide.

13. The method of claim 11, where the second hard mask layer is formed from one of zirconium oxide, hafnium oxide, an oxide of a rare earth material, or an oxide of a lanthanide.

14. The method of claim 9, comprising applying the second hard mask layer with an atomic layer epitaxy method.

15. The method of claim 14, where the hard mask layer comprises aluminum oxide.

16. The method of claim 15, comprising forming the second hard mask layer from silicon dioxide.

17. The method of claim 16, where the hard mask layer is formed from one of zirconium oxide, hafnium oxide, an oxide of a rare earth material, or an oxide of a lanthanide.

18. The method of claim 16, where the second hard mask layer is formed from one of zirconium oxide, hafnium oxide, an oxide of a rare earth material, or an oxide of a lanthanide.

19. The method of claim 9, comprising:

applying a second photoresist layer to the second hard mask layer, and

patterning the second photoresist layer.

28. The hard mask of claim 1, comprising a second hard mask layer applied to the hard mask layer after the removal of the patterned photoresist layer.

20. A hard mask arrangement, comprising:

a substrate;

a patterned photoresist layer applied on the substrate; and

a hard mask layer applied on the photoresist layer, a portion of the hard mask being removed to expose a corresponding portion of the patterned photoresist layer,

where the exposed patterned photoresist layer is configured to be removed.

21. The hard mask of claim 20, where the hard mask layer comprises silicon dioxide or aluminum oxide.

22. The hard mask of claim 20, comprising a second hard mask layer applied to the hard mask layer, the second hard mask being applied to the patterned photoresist after the patterned photoresist layer is removed.

23. The method of claim 22, where the hard mask layer is formed from one of aluminum oxide, zirconium oxide, hafnium oxide, an oxide of a rare earth material, or an oxide of a lanthanide.

24. The method of claim 22, where the second hard mask layer comprises one of silicon dioxide, zirconium oxide, hafnium oxide, an oxide of a rare earth material, or an oxide of a lanthanide.

25. A hard mask, comprising

an atomic-layer-epitaxy applied hard mask layer being to a patterned photoresist layer on a substrate, at least a portion of the atomic-layer-epitaxy applied hard mask layer being removed exposing at least a portion of the patterned photoresist layer.

26. The hard mask of claim 25, where a portion of the photo resist layer is being exposed is removed from the substrate.

27. The hard mask of claim 26, where the hard mask layer comprises silicon dioxide or aluminum oxide.