Method for fabricating organic electroluminescent devices

• US 20060234410A1
• Filed: 08/12/2005
• Published: 10/19/2006
• Est. Priority Date: 04/15/2005
• Status: Abandoned Application

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Chen, Yun-Sheng
• Application Number:
  US11/202,846
• Publication Number:
  US 20060234410A1
• Time in Patent Office: Days
• US Class Current: 438/45
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters

Abstract

A method for fabricating organic electroluminescent elements comprising an LTPS-TFT as driving circuits. The method comprises providing a substrate, forming an LTPS-TFT on the substrate, and forming an OLED electrically connecting the LTPS-TFT. Specifically, the method for forming a channel region of the LTPS-TFT includes forming a polysilicon layer with a predetermined channel region, and performing an implantation process on the predetermined channel region.

Claims

1. A method for fabricating an organic electroluminescent device, comprising:

providing a substrate;

forming a low temperature polysilicon thin film transistor (LTPS-TFT) including a channel region, a source electrode, and a drain electrode on the substrate;

forming an organic electroluminescent element on the substrate, wherein the organic electroluminescent element comprises an anode coupled to the drain electrode,

wherein a method of forming the channel region comprises;

forming a polysilicon layer with a predetermined channel region; and

performing an ion-implantation into the predetermined channel region.

2. The method as claimed in claim 1, wherein the ion-implantation comprises p-type ion-implantation.

3. The method as claimed in claim 2, wherein the p-type ion-implantation is Boron-ion implantation.

4. The method as claimed in claim 1, wherein the ion-implantation comprises n-type ion-implantation.

5. The method as claimed in claim 4, wherein the n-type ion-implantation process is phosphorous-ion implantation.

6. The method as claimed in claim 1, wherein the ion-implantation comprises a p-type ion-implantation and an n-type ion-implantation.

7. The method as claimed in claim 1, wherein the ion-implantation comprises a Boron-ion implantation and a phosphorous-ion implantation.

8. The method as claimed in claim 1, wherein the step of performing the ion-implantation comprises sequentially performing a boron-ion implantation and a phosphorous-ion implantation into the predetermined channel region.

9. The method as claimed in claim 1, wherein the step of performing the ion-implantation process comprises sequentially performing a phosphorous-ion implantation and a boron-ion implantation into the predetermined channel region.

10. The method as claimed in claim 1, wherein the implantation dose of the ion-implantation process is substantially between 1.0×

10¹⁰ ion/cm² and 1.0×

10²⁰ ion/cm².