Gas distribution showerhead featuring exhaust apertures

• US 20060234514A1
• Filed: 06/13/2006
• Published: 10/19/2006
• Est. Priority Date: 11/19/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Janakiraman, Karthik, Gianoulakis, Steven
• Granted Patent: US 7,452,827 B2
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.

Claims

1. A method of processing a semiconductor workpiece, the method comprising:

flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate; and

removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.

2. The method of claim 1 further comprising removing the gas through only the chamber exhaust port prior to flowing the process gas.

3. The method of claim 1 further comprising removing the gas through the chamber exhaust port and the second plurality of orifices prior to flowing the process gas.

4. The method of claim 1 further comprising initially removing gas through only the chamber exhaust port.

5. The method of claim 1 further comprising initially removing gas through only the second plurality of orifices.

6. The method of claim 1 wherein the processing chamber is evacuated to a pressure below 20 Torr.

7. The method of claim 6 further comprising generating a plasma in the processing chamber prior to flowing the process gas.

8. The method of claim 1 further comprising adjusting a rate of removal of gas through the chamber exhaust port during processing.

9. The method of claim 1 further comprising adjusting a rate of removal of gas through the second plurality of orifices is adjusted during processing.

10. A method of processing a semiconductor wafer in a chamber comprising:

inserting a semiconductor wafer into the chamber;

evacuating the chamber through a first exhaust port;

introducing at least one process gas through a first set of orifices located on a surface of a showerhead;

removing gas through the first exhaust port; and

removing gas through a plurality of orifices positioned on the surface of the showerhead.

11. The method of claim 10 wherein a larger volume of gas is removed through the first exhaust port than is removed through the plurality of orifices.

12. The method of claim 10 wherein the chamber is evacuated to a pressure below 20 Torr.

13. The method of claim 12 wherein a plasma is generated in the chamber prior to the step of introducing the at least one process gas.

14. The method of claim 10 wherein removal of the gas through the first exhaust port and through the plurality of orifices occurs substantially simultaneously.

15. A method of controlling uniformity of a property of a film deposited on a semiconductor wafer, the method comprising:

positioning a wafer in a processing chamber;

introducing gases to the wafer through a first plurality of orifices positioned on a faceplate;

removing the gases through a second plurality of orifices positioned on the faceplate; and

simultaneously removing the gases across a radial exhaust path.

16. The method of claim 15 further comprising evacuating the chamber across the radial exhaust path only, prior to flowing the gases.

17. The method of claim 15 further comprising evacuating the chamber across the radial exhaust path and the second plurality of orifices prior to flowing the gases.

18. The method of claim 15 further comprising initially removing the gases through only the radial exhaust path.

19. The method of claim 15 further comprising initially removing the gases through only the second plurality of orifices.

20. The method of claim 15 wherein the chamber is evacuated to a pressure below about 20 Torr.

21. The method of claim 20 further comprising generating a plasma in the chamber.

22. The method of claim 15 wherein a rate of removing gas across the radial exhaust path is adjusted during processing.

23. The method of claim 15 wherein a rate of removing gas through the second plurality of orifices is adjusted during processing.