High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate
First Claim
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1. A transparent thin film transistor device comprising:
- a transparent substrate;
a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature; and
a transparent semiconductor layer disposed over the insulator layer.
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Abstract
A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.
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24 Claims
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1. A transparent thin film transistor device comprising:
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a transparent substrate;
a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature; and
a transparent semiconductor layer disposed over the insulator layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15)
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13. A method of developing a transparent thin film transistor device comprising:
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providing a transparent substrate;
forming a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature; and
forming a transparent semiconductor layer disposed over the insulator layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification