Computer-implemented methods for detecting defects in reticle design data

• US 20060236294A1
• Filed: 01/31/2005
• Published: 10/19/2006
• Est. Priority Date: 01/29/2004
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Saidin, Zain K., Glasser, Lance, Xiong, Yalin, Preil, Moshe E., Hess, Carl
• Granted Patent: US 7,646,906 B2
• Time in Patent Office: Days
• US Class Current: 700/110
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70533 Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects
• CPC Class Codes: G03F 7/70666 Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
• CPC Class Codes: G06Q 30/0206 Price or cost determination based on market factors

Abstract

Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.

Claims

1. A computer-implemented method for detecting defects in reticle design data, comprising:

generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process;

generating second simulated images using the first simulated image, wherein the second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process; and

detecting defects in the reticle design data using the second simulated images.

2. The method of claim 1, wherein the first and second simulated images comprise simulated images of a complete chip defined by the reticle design data.

3. The method of claim 1, wherein the reticle design data comprises integrated circuit design data modified by resolution enhancement technology feature data.

4. The method of claim 1, wherein the different values span a predetermined process window for the one or more parameters of the wafer printing process.

5. The method of claim 1, further comprising determining a process window for the wafer printing process based on results of said detecting.

6. The method of claim 1, further comprising determining which of the different values at which at least one of the defects appears in the second simulated images.

7. The method of claim 1, further comprising determining a region in the reticle design data in which the defects appear at the different values that are closer to nominal values for the one or more parameters of the wafer printing process than the different values at which the defects appear in other regions on the reticle.

8. The method of claim 1, wherein said detecting comprises comparing the second simulated images to a reference image, and wherein the reference image comprises an additional simulated image illustrating how the reticle will be printed on the wafer at nominal values of the one or more parameters of the wafer printing process.

9. The method of claim 1, wherein said detecting comprises comparing the second simulated images to a reference image, and wherein the reference image illustrates how the reticle design data would ideally be printed on the wafer.

10. The method of claim 1, wherein said detecting comprises comparing one of the second simulated images to additional simulated images that illustrate how the reticle will be printed on the wafer at the different values that are closer to nominal values for the one or more parameters of the wafer printing process than the different values corresponding to the one second simulated image.

11. The method of claim 1, further comprising generating additional simulated images illustrating how the reticle design data will be printed on the reticle at different values of one or more parameters of the reticle manufacturing process and selecting the different values of the one or more parameters of the reticle manufacturing process that produce a minimum number of design pattern defects on the reticle.

12. The method of claim 1, further comprising altering the reticle design data based on results of said detecting, wherein said altering comprises altering resolution enhancement technology feature data of the reticle design data.

13. The method of claim 1, further comprising generating an inspection process for the reticle based on results of said detecting.

14. The method of claim 1, further comprising generating an inspection process for the wafer based on results of said detecting.

15. The method of claim 1, further comprising fabricating the reticle subsequent to said detecting, inspecting the reticle, and generating an inspection process for the wafer based on results of said detecting and said inspecting.

16. The method of claim 1, further comprising fabricating the reticle subsequent to said detecting, inspecting the reticle, and generating an inspection process for the wafer based on results of said detecting, results of said inspecting, critical feature data generated by a designer of the reticle design data, or some combination thereof.

17. The method of claim 1, further comprising identifying first regions in the reticle design data that have a greater probability of being printed defectively than second regions in the reticle design data and generating a process control method for wafers that will be printed with the reticle based on results of said identifying.

18. The method of claim 1, further comprising identifying first regions in the reticle design data that have a greater probability of being printed defectively than second regions in the reticle design data and altering the reticle design data based on said identifying.

19. A simulation engine configured to:

generate a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process; and

generate second simulated images using the first simulated image, wherein the second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the second simulated images can be used to detect defects in the reticle design data.

20. A system configured to detect defects in reticle design data, comprising:

a simulation engine configured to;

generate a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process; and

generate second simulated images using the first simulated image, wherein the second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process; and

a processor configured to detect defects in the reticle design data using the second simulated images.

21. A computer-implemented method for detecting defects in reticle design data, comprising:

generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process;

generating second simulated images using the first simulated image, wherein the second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process;

determining a rate of change in a characteristic of the second simulated images as a function of the different values; and

detecting defects in the reticle design data based on the rate of change.

22. The method of claim 21, wherein said detecting comprises using the rate of change in combination with the second simulated images to detect the defects in the reticle design data.

23. A computer-implemented method for detecting defects in reticle design data printed on a reticle, comprising:

printing images of the reticle on a wafer at different values of one or more parameters of a wafer printing process;

determining a rate of change in a characteristic of the images as a function of the different values; and

detecting defects in the reticle design data based on the rate of change.