Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

• US 20060237537A1
• Filed: 06/14/2006
• Published: 10/26/2006
• Est. Priority Date: 09/30/2002
• Status: Abandoned Application

• Current Assignee: Nanosys Incorporated (Shoei Electronic Materials, Inc.)
• Original Assignee: Nanosys Incorporated (Shoei Electronic Materials, Inc.)
• Inventors: Niu, Chunming, Empedocles, Stephen, Stumbo, David P., Duan, Xianfeng
• Application Number:
  US11/453,118
• Publication Number:
  US 20060237537A1
• Time in Patent Office: Days
• US Class Current: 235/439
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/02 using elements whose operation depends upon chemical change G11C13/0009 takes precedence
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/16 Memory cell being a nanotube, e.g. suspended nanotube
• CPC Class Codes: G11C 2213/17 Memory cell being a nanowire transistor
• CPC Class Codes: G11C 2213/18 Memory cell being a nanowire having RADIAL composition
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

Claims

1. A distributed sensor network, comprising:

a base station configured to manage the distributed sensor network; and

at least one sensor, said sensor coupled to said base station, said sensor comprising a thin film of nanowires.

2. The distributed sensor network of claim 1, wherein said nanowires are aligned substantially parallel to their long axis.

3. The distributed sensor network of claim 1, wherein said nanowires are randomly aligned.

4. The distributed sensor network of claim 1, wherein said nanowires are coated with a dielectric material to thereby form a gate dielectric.

5. The distributed sensor network of claim 1, wherein said nanowires have doped cores.

6. The distributed sensor network of claim 1, wherein said nanowires have doped shells.

7. The distributed sensor network of claim 1, wherein said nanowires have doped cores and shells.

8. The distributed sensor network of claim 1, wherein said nanowires are N-doped.

9. The distributed sensor network of claim 1, wherein said nanowires are P-doped.

10. The distributed sensor network of claim 1, wherein said sensor comprises a flexible plastic substrate on which said thin film of nanowires is deposited.

11. The distributed sensor network of claim 1, wherein said nanowires comprise silicon nanowires.

12. The distributed sensor network of claim 1, further comprising a plurality of sensors coupled to said base station, wherein each sensor within said network comprises a thin film of nanowires.