Semiconductor device

• US 20060237726A1
• Filed: 04/24/2006
• Published: 10/26/2006
• Est. Priority Date: 04/25/2005
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Iwamatsu, Toshiaki, Ipposhi, Takashi, Maegawa, Shigeto, Ikeda, Tatsuhiko
• Granted Patent: US 7,358,555 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 27/0811 MIS diodes
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

While improving the frequency characteristics of a decoupling capacitor, suppressing the voltage drop of a source line and stabilizing it, the semiconductor device which suppressed decline in the area efficiency of decoupling capacitor arrangement is offered.

Decoupling capacitors DM1 and DM2 are connected between the source line connected to the pad for high-speed circuits which supplies electric power to circuit block C1, and the ground line connected to a ground pad, and the capacitor array for high-speed circuits is formed. A plurality of decoupling capacitor DM1 are connected between the source line connected to the pad for low-speed circuits which supplies electric power to circuit block C2, and the ground line connected to a ground pad, and the capacitor array for low-speed circuits is formed. Decoupling capacitor DM1 differs in the dimension of a gate electrode from DM2.

Claims

1. A semiconductor device, comprising:

a first circuit that operates on a first frequency and a second circuit that operates on a second frequency lower than the first frequency located over a semiconductor substrate;

a first source line that gives operating voltage to the first circuit;

a second source line that gives operating voltage to the second circuit;

a ground line to which grounding electric potential is given; and

at least two kinds of decoupling capacitors which are connected between the first source line and the ground line and which have an MOS structure;

wherein regarding the at least two kinds of decoupling capacitors, at least one side between a gate length and a gate width of a gate electrode which forms the MOS structure is set as different length.

2. A semiconductor device according to claim 1, wherein

the at least two kinds of decoupling capacitors are located in an external open area outside an arrangement region of the first and the second circuits over the semiconductor substrate, and/or an internal open area in the first circuit.

3. A semiconductor device according to claim 1, further comprising:

one kind of decoupling capacitor which is connected between the second source line and the ground line and which has an MOS structure.

4. A semiconductor device according to claim 2, wherein

the first circuit has a plurality of circuit parts to which operating voltage is supplied by the first source line;

and

when the at least two kinds of decoupling capacitors are located in the internal open area, the at least two kinds of decoupling capacitors are connected between the first source line of the circuit part, and the ground line.

5. A semiconductor device according to claim 4, wherein

the at least two kinds of decoupling capacitors differ in the gate length of the gate electrode.

6. A semiconductor device according to claim 5, wherein

the at least two kinds of decoupling capacitors have the same gate width of the gate electrode.

7. A semiconductor device according to claim 5, wherein

the gate length'"'"'s shorter one among the at least two kinds of decoupling capacitors is located at a location near the circuit part.

8. A semiconductor device according to claim 4, wherein

the at least two kinds of decoupling capacitors differ in the gate width of the gate electrode.

9. A semiconductor device according to claim 8, wherein

the at least two kinds of decoupling capacitors have the same gate length of the gate electrode.

10. A semiconductor device according to claim 8, wherein

the gate width'"'"'s shorter one among the at least two kinds of decoupling capacitors is located at a location near the circuit part.

11. A semiconductor device according to claim 4, wherein

the at least two kinds of decoupling capacitors differ in the gate length and the gate width of the gate electrode.

12. A semiconductor device according to claim 1, wherein

the at least two kinds of decoupling capacitors are MOS capacitors of an accumulation type whose conductivity type of an impurity of a region located between a source layer and a drain layer is a same as both.

13. A semiconductor device according to claim 1, wherein

the at least two kinds of decoupling capacitors are MOS capacitors of an inversion type whose conductivity type of an impurity of a region located between a source layer and a drain layer differs with both.

14. A semiconductor device according to claim 1, wherein

the semiconductor substrate is a SOI substrate which includes a silicon substrate, a buried oxide film located over the silicon substrate, and an SOI layer located over the buried oxide film.

15. A semiconductor device according to claim 1, wherein

the at least two kinds of decoupling capacitors include two kinds of decoupling capacitors;

and

an impurity concentration of the semiconductor substrate under a gate insulating film of a side of a larger area specified by a product of the gate length and the gate width of the gate electrode is lower than the decoupling capacitor of another side.

16. A semiconductor device according to claim 1, further comprising:

a MOS transistor located between each of the at least two kinds of decoupling capacitors, and the first source line, or the ground line;

wherein diode connection of the MOS transistor is made,

17. A semiconductor device according to claim 1, further comprising:

a resistance located between each of the at least two kinds of decoupling capacitors, and the first source line, or the ground line.

18. A semiconductor device according to claim 1, further comprising:

a capacitor located between each of the at least two kinds of decoupling capacitors, and the first source line.

19. A semiconductor device according to claim 18, wherein

the capacitor has an insulating layer covered each gate electrode upper part of the at least two kinds of decoupling capacitors.

20. A semiconductor device according to claim 1, further comprising:

a control circuit which is located between each of the at least two kinds of decoupling capacitors, and the first source line, receives a signal showing whether the first circuit is operating, and controls electric potential so that a voltage of the first source line is not applied to each of the at least two kinds of decoupling capacitors when the first circuit is not operating.

21. A semiconductor device according to claim 1, wherein

each of the at least two kinds of decoupling capacitors is located in arranging a primitive cell including one or more decoupling capacitors of a same kind to the external open area and/or internal open area;

and

the primitive cell is set up so that a size specified with a dimension of a gate width direction or a dimension of a gate length direction may become common.

22. A semiconductor device, comprising:

a first circuit that operates on a first frequency and a second circuit that operates on a second frequency lower than the first frequency located over a semiconductor substrate;

a first source line that gives operating voltage to the first circuit;

a second source line that gives operating voltage to the second circuit;

a ground line to which grounding electric potential is given;

a first decoupling capacitor that is connected between the first source line and the ground line and that has an MOS structure; and

a second decoupling capacitor that is connected between the second source line and the ground line and that has an MOS structure;

wherein the first decoupling capacitor is set up so that at least one side of a gate length and a gate width of a gate electrode which form the MOS structure is smaller than the second decoupling capacitor.