Light emitting device
First Claim
1. A light emitting device, comprising:
- an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
said active layer including, first and second well layers made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, an intervening barrier layer disposed between said first and second well layers, and first and second barrier layers, said first well layer being sandwiched between said first barrier layer and said intervening barrier layer, and said second well layer being sandwiched between said second barrier layer and said intervening barrier layer, wherein a thickness of said first barrier layer is different than a thickness of said second barrier layer.
0 Assignments
0 Petitions
Accused Products
Abstract
A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer. The active layer also includes an intervening barrier layer disposed between the first and second well layers, and first and second barrier layers. The first well layer isg sandwiched between the first barrier layer and the intervening barrier layer, and the second well layer is sandwiched between the second barrier layer and the intervening barrier layer. A thickness of said first barrier layer is different than a thickness of said second barrier layer.
-
Citations
27 Claims
-
1. A light emitting device, comprising:
-
an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
said active layer including, first and second well layers made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, an intervening barrier layer disposed between said first and second well layers, and first and second barrier layers, said first well layer being sandwiched between said first barrier layer and said intervening barrier layer, and said second well layer being sandwiched between said second barrier layer and said intervening barrier layer, wherein a thickness of said first barrier layer is different than a thickness of said second barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A light emitting device comprising:
-
an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
said active layer including, at least one first well layer made of a nitride compound semiconductor containing In, and at least one second well layer made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, and a plurality of barrier layers including a first barrier layer, a second barrier layer and a third barrier layer, wherein said first barrier layer, said first well layer, said second barrier layer, said second well layer and said third barrier layer are laminated in order, and wherein a thickness of each of said first and second barrier layers is greater than a thickness of said third barrier layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
-
-
20. A light emitting device comprising:
-
an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;
said active layer including, at least one first well layer made of a nitride compound semiconductor containing In, and at least one second well layer made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, and a plurality of barrier layers including a first barrier layer, a second barrier layer and a third barrier layer, wherein said first barrier layer, said first well layer, said second barrier layer, said second well layer and said third barrier layer are laminated in order, and wherein a thickness of each of said second and third barrier layers is less than a thickness of said first barrier layer. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
-
Specification