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Light emitting device

  • US 20060237733A1
  • Filed: 03/07/2006
  • Published: 10/26/2006
  • Est. Priority Date: 09/21/1998
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer;

    said active layer including, first and second well layers made of a nitride compound semiconductor containing In, said second well layer emitting light having a main peak wavelength which is longer than that of said first well layer, an intervening barrier layer disposed between said first and second well layers, and first and second barrier layers, said first well layer being sandwiched between said first barrier layer and said intervening barrier layer, and said second well layer being sandwiched between said second barrier layer and said intervening barrier layer, wherein a thickness of said first barrier layer is different than a thickness of said second barrier layer.

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