Thin-layer light-emitting diode chip and method for the production thereof

• US 20060237734A1
• Filed: 08/19/2004
• Published: 10/26/2006
• Est. Priority Date: 08/29/2003
• Status: Abandoned Application

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Baur, Johannes, Harle, Volker
• Application Number:
  US10/567,935
• Publication Number:
  US 20060237734A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A thin-layer LED chip (5) is claimed, comprising an epitaxial layer sequence (6) that is disposed on a carrier element (2) and contains an electromagnetic-radiation-generating active region (8), and a reflective layer (3) that is disposed on a principal surface of the epitaxial layer sequence (6) facing toward the carrier element (2) and reflects at least a portion of the electromagnetic radiation generated in the epitaxial layer sequence (6) back thereinto, in which a structured layer (1) containing a glass material is applied to a radiation extraction surface (7) of the epitaxial layer sequence (6) facing away from said carrier element (2) and has a structure that includes mutually adjacent protuberances (5) that taper in the direction away from the radiation extraction surface (7) and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence (6). The structured layer (1) is advantageously applied as spin-on glass and structured by grayscale lithography.

Claims

1. A thin-layer LED chip comprising an epitaxial layer sequence that is disposed on a carrier element and comprises an electromagnetic-radiation-generating active region, and a reflective layer that is disposed on a principal surface of said epitaxial layer sequence facing toward said carrier element and reflects at least a portion of the electromagnetic radiation generated in said epitaxial layer sequence back thereinto, wherein-disposed on a radiation extraction surface of said epitaxial layer sequence facing away from said carrier element is a structured layer containing a glass material and exhibiting a structure that includes mutually adjacent protuberances that taper away from said radiation extraction surface and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from said epitaxial layer sequence.

2. The thin-layer LED chip as in claim 1, wherein the refractive index of said layer lies between the refractive index of a material of a side of said epitaxial layer sequence adjacent said radiation extraction surface and the refractive index of a medium intended as an ambient for said thin-layer LED chip.

3. The thin-layer LED chip as in claim 1, wherein-said structure comprises protuberances that are largely periodically arranged.

4. The thin-layer LED chip as in claim 1, said protuberances are convexly curved as viewed from the outside.

5. The thin-layer LED chip as in claim 1, wherein said glass material is a spin-on glass.

6. The thin-layer LED chip as in claim 1, the height of said protuberances in the direction away from said radiation extraction surface is smaller than one wavelength of an electromagnetic radiation emitted from said epitaxial layer sequence.

14. The thin-layer led chip as in claim 2, wherein said structure comprises protuberances that are largely periodically arranged.

7. A method for making a thin-layer LED chip comprising an epitaxial layer sequence that is disposed on a carrier element and contains an electromagnetic-radiation-generating active region, and a reflective layer that is disposed on a principal surface of said epitaxial layer sequence facing toward said carrier element and reflects at least a portion of the electromagnetic radiation generated in said epitaxial layer sequence back thereinto, wherein said epitaxial layer sequence disposed on said carrier element is prepared, a layer containing a glass material is applied to a radiation extraction surface of said epitaxial layer sequence facing away from said carrier element, and a structure is introduced into at least a portion of said layer, said structure including mutually adjacent protuberances that taper in the direction away from said radiation extraction surface and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from said epitaxial layer sequence.

8. The method as in claim 7, wherein-said layer is fabricated by applying a still-molten spin-on glass to said radiation extraction surface and thermally treating said spin-on glass such that it hardens and densifies.

9. The method as in claim 8, wherein the spin-on glass is applied by spin-coating and/or printing.

10. The method as in claim 7, wherein said structure is introduced into said layer by grayscale lithography.

11. The method as in claim 7, wherein-said structure is introduced in such fashion that it comprises periodically arranged protuberances.

12. The method as in claim 7, wherein-the refractive index of said layer lies between the refractive index of a material of a side of said epitaxial layer sequence (6) facing toward said radiation extraction surface and the refractive index of a medium intended as an ambient for said thin-layer LED chip.

13. The method as in claim 7, wherein said structure is introduced in such fashion that the height of said protuberances in the direction away from said radiation extraction surface is smaller than one wavelength of an electromagnetic radiation emitted from said epitaxial layer sequence.