Electro-optic transducer die including a temperature sensing PN junction diode

• US 20060237807A1
• Filed: 04/20/2005
• Published: 10/26/2006
• Est. Priority Date: 04/20/2005
• Status: Abandoned Application

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Inventors: Hosking, Lucy G.
• Application Number:
  US11/110,112
• Publication Number:
  US 20060237807A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission

Abstract

An electro-optic transducer die that includes both an optically emissive PN junction diode and a temperature sensing PN junction diode. Since the temperature sensing PN junction diode is in the very same die as the optically emissive PN junction diode, there is very little thermal resistance between the optically emissive PN junction diode and the temperature sensing PN junction diode. Accordingly, the temperature sensed by the temperature sensing PN junction diode more accurately tracks the actual temperature of the optically emissive PN junction diode.

Claims

1. An electro-optic transducer die comprising:

an optically emissive PN junction diode configured to emit optical signals when electricity is passed through the optically emissive PN junction diode; and

a temperature sensing PN junction diode configured to provide a signal that varies with temperature.

2. An electro-optic transducer die in accordance with claim 1, further comprising:

an electrical barrier configured between the optically emissive PN junction diode and the temperature sensing PN junction diode.

3. An electro-optic transducer die in accordance with claim 1, further comprising:

an optical barrier configured between the optically emissive PN junction diode and the temperature sensing PN junction diode.

4. An electro-optic transducer die in accordance with claim 3, further comprising:

an electrical barrier configured between the optical emissive PN junction diode and the temperature sensing PN junction diode.

5. An electro-optic transducer die in accordance with claim 4, wherein the optical barrier and the electrical barrier are the same structure.

6. An electro-optic transducer die in accordance with claim 1, wherein the electro-optic transducer die is mounted on a substrate that is coupled to a temperature driver.

7. An electro-optic transducer die in accordance with claim 1, wherein the optically emissive PN junction diode is a laser diode.

8. An electro-optic transducer die in accordance with claim 1, wherein the optically emissive PN junction diode is a Light Emitted Diode (LED).

9. An electro-optic transducer die in accordance with claim 1, further comprising:

one or more electrical contacts for forming an electrical connection to the optically emissive PN junction diode; and

one or more electrical contacts for forming an electrical connection to the temperature sensing PN junction diode.

10. A method for manufacturing an electro-optic transducer die comprising:

an act of forming an optically emissive PN junction diode in the electro-optic transducer die, wherein the optically emissive PN junction diode is configured to emit optical signals when electricity is passed through the optically emissive PN junction diode; and

an act of forming a temperature sensing PN junction diode in the electro-optic transducer die, wherein the temperature sensing PN junction diode is configured to provide a signal that varies with temperature.

11. A method in accordance with claim 10, further comprising:

an act of placing an electrical barrier between the optically emissive PN junction diode and the temperature sensing PN junction diode.

12. A method in accordance with claim 11, further comprising:

an act of placing an optical barrier between the optically emissive PN junction diode and the temperature sensing PN junction diode.

13. A method in accordance with claim 12, wherein the electrical barrier and the optical barrier are part of the same structure such that the acts of placing the electrical barrier and placing the optical barrier occur simultaneously.

14. A method in accordance with claim 10, further comprising:

an act of placing an optical barrier between the optically emissive PN junction diode and the temperature sensing PN junction diode.

15. A method in accordance with claim 10, further comprising:

an act of forming one or more electrical contacts on the electro-optic transducer die to form an electrical connection to the optically emissive PN junction diode; and

an act of forming one or more electrical contacts on the electro-optic transducer die to form an electrical connection to the temperature sensing PN junction diode.