Semiconductor device and display device
First Claim
Patent Images
1. A semiconductor device comprising:
- an electrode;
a current-voltage converter element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal; and
a third transistor comprising;
a fifth terminal connected to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire.
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Abstract
When a signal inputted to a pixel is erased by setting potentials of a gate terminal and a source terminal of a driving transistor to be equal, a current slightly flows through the driving transistor in some cases, which leads to occur a display defect. The invention provides a display device which improves the yield while suppressing the increase in manufacturing cost. When a potential of a scan line for erasure is raised, a potential of the gate terminal of the driving transistor is raised accordingly. For example, the scan line and the gate terminal of the driving transistor are connected through a rectifying element.
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Citations
35 Claims
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1. A semiconductor device comprising:
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an electrode;
a current-voltage converter element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal; and
a third transistor comprising;
a fifth terminal connected to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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an electrode;
a current-voltage converter element;
a capacitor element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal, and to the third wire through the capacitor element; and
a third transistor comprising;
a fifth terminal connected to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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an electrode;
a current-voltage converter element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal; and
a third transistor comprising;
a fifth terminal connected to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire, wherein the current-voltage converter element is a resistor. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device comprising:
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an electrode;
a current-voltage converter element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal; and
a third transistor comprising;
a fifth terminal connected to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire, wherein the current-voltage converter element is a resistor, and wherein the fifth terminal, the sixth terminal and the resistor are included in one island-shaped semiconductor layer. - View Dependent Claims (21, 22, 23, 24, 26)
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25. A semiconductor device comprising:
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an electrode;
a current-voltage converter element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal; and
a third transistor comprising;
a fifth terminal connected-to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire, wherein the current-voltage converter element is a rectifying element. - View Dependent Claims (27, 28, 29, 30)
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31. A semiconductor device comprising:
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an electrode;
a current-voltage converter element;
a first transistor comprising;
a first terminal connected to a first wire;
a second terminal; and
a first gate terminal connected to a second wire;
a second transistor comprising;
a third terminal connected to a third wire;
a fourth terminal connected to the electrode; and
a second gate terminal connected to the second terminal; and
a third transistor comprising;
a fifth terminal connected to the second gate terminal;
a sixth terminal connected to a fourth wire through the current-voltage converter element; and
a third gate terminal connected to the fourth wire, wherein the current-voltage converter element is PN junction diode having a first doped region and a second doped region, wherein the fifth terminal, the sixth terminal, the first doped region and the second doped region are included in one island-shaped semiconductor layer, wherein the fifth terminal, the sixth terminal and the first doped region comprise a first dopant, and wherein the second doped region comprises a second dopant. - View Dependent Claims (32, 33, 34, 35)
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Specification