MEMS Fabrication on a Laminated substrate

• US 20060238951A1
• Filed: 07/03/2006
• Published: 10/26/2006
• Est. Priority Date: 12/31/2002
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Qian, Jiangyuan, Cetiner, Bedri A., Chang, Hung-Pin, De Flaviis, Franco, Bachman, Mark, Li, Guann-Pyng
• Granted Patent: US 7,884,689 B2
• Time in Patent Office: Days
• US Class Current: 361/160
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142

Abstract

Systems and methods are provided that facilitate the formation of micro-mechanical structures and related systems on a laminated substrate. More particularly, a micro-mechanical device and a three-dimensional multiple frequency antenna are provided for in which the micro-mechanical device and antenna, as well as additional components, can be fabricated together concurrently on the same laminated substrate. The fabrication process includes a low temperature disposition process allowing for deposition of an insulator material at a temperature below the maximum operating temperature of the laminated substrate, as well as a planarization process allowing for the molding and planarizing of a polymer layer to be used as a form for a micro-mechanical device.

Claims

1. An electrical apparatus, comprising:

a printed circuit board (PCB) substrate having a maximum operating temperature less than 250 degrees Celsius; and

a micro-electro-mechanical (MEM) device formed on the PCB substrate.

2. The electrical apparatus of claim 1, wherein the MEM device is a switch.

3. The electrical apparatus of claim 2, wherein the MEM device comprises:

a first member comprising a conductive material and formed on a laminated substrate;

a second member formed on the substrate; and

an actuatable member comprising a conductive material, a first end and a second end, wherein the first end is coupled with the first conductive member and the second end is suspended above the second member, wherein the actuatable member is moveable in relation to the second member and the second member is configured to induce movement of the actuatable member.

4. The electrical apparatus of claim 3, wherein the second member is configured to induce movement of the actuatable member into contact with the second member.

5. The electrical apparatus of claim 4, wherein the second member comprises an insulator layer configured to prevent substantial flow of direct current between the second member and the actuatable member.

6. The electrical apparatus of claim 1, wherein the MEM device is configured for use with a radio frequency (RF) signal.

7. The electrical apparatus of claim 1, wherein the MEM device comprises a dielectric layer formed on the PCB substrate.

8. The electrical apparatus of claim 7, wherein the MEM device comprises a conductive member formed on the PCB substrate.

9. The electrical apparatus of claim 7, wherein the MEM device comprises a conductive member formed in the PCB substrate.

10. The electrical apparatus of claim 1, further comprising an antenna formed on the PCB substrate, the antenna being electrically coupled with the MEM device.

11. The electrical apparatus of claim 1, further comprising an antenna formed on the PCB substrate, the antenna being electrically coupled with the MEM device.

12. The electrical apparatus of claim 1, wherein the maximum operating temperature of of the PCB substrate is substantially 200 degrees Celsius or less.

13. The electrical apparatus of claim 12, wherein the MEM device is a switch.

14. The electrical apparatus of claim 2, wherein the MEM device comprises:

a first member comprising a conductive material and formed on a laminated substrate;

a second member formed on the substrate; and

an actuatable member comprising a conductive material, a first end and a second end, wherein the first end is coupled with the first conductive member and the second end is suspended above the second member, wherein the actuatable member is moveable in relation to the second member.

15. The electrical apparatus of claim 1, wherein the MEM device is a filter.

16. The electrical apparatus of claim 1, wherein the MEM device is a variable impedance device.

17. The electrical apparatus of claim 1, wherein the MEM device is a radio frequency (RF) matching circuit.

25. The electrical apparatus of claim 1, wherein the MEM device is a filter.

26. The electrical apparatus of claim 1, wherein the MEM device is a variable impedance device.

27. The electrical apparatus of claim 1, wherein the MEM device is a radio frequency (RF) matching circuit.

28. The electrical apparatus of claim 1, wherein the MEM device is a switch.

18. An electrical apparatus fabricated by a process comprising:

providing a printed circuit board (PCB) substrate having a maximum operating temperature; and

forming a MEM device on the PCB substrate at a temperature less than the maximum operating temperature of the PCB substrate.

19. The electrical apparatus of claim 18, wherein forming a MEM device comprises depositing a dielectric layer at a deposition temperature less than the maximum operating temperature of the PCB substrate.

20. The electrical apparaturs of claim 19, wherein the maximum operating temperature of the PCB substrate is less than 250 degrees Celsius.

21. The electrical apparatus of claim 19, wherein the maximum operating temperature is less than 200 degrees Celsius.

22. The method of claim 19, wherein depositing the dielectric layer comprises depositing the dielectric layer with a low temperature chemical vapor deposition (CVD) process.

23. The method of claim 22, wherein depositing the dielectric layer comprises depositing the dielectric layer with a low temperature, high-density inductively coupled plasma enhanced chemical vapor deposition (HDICP CVD) process.

24. The method of claim 19, wherein depositing the dielectric layer comprises:

placing the PCB substrate in a processing chamber;

increasing the energy of a plasma by inductively coupling radio frequency energy into the plasma to create a higher energy plasma; and

depositing the dielectric layer on the PCB with a plasma enhanced chemical vapor deposition process using the higher energy plasma.