Method for manufacturing semiconductor device

• US 20060240574A1
• Filed: 04/18/2006
• Published: 10/26/2006
• Est. Priority Date: 04/20/2005
• Status: Active Grant

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Inventors: Yoshie, Toru
• Granted Patent: US 7,572,333 B2
• Time in Patent Office: Days
• US Class Current: 438/1
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: H01L 21/67103 mainly by conduction

Abstract

A semiconductor manufacturing apparatus A semiconductor manufacturing apparatus comprises a hot plate which heats a sapphire substrate; a support table having a support plate disposed with being spaced away from the hot plate by a predetermined interval, and support portions which respectively support the sapphire substrate with being spaced by a predetermined interval between the hot plate and the support plate and support the sapphire substrate in such a manner that back surfaces of the hot plate and the sapphire substrate are opposite to each other; an elevating device which moves the support table up and down; and a shielding cover which externally blocks off spacing defined between the hot plate and the sapphire substrate and spacing defined between the sapphire substrate and the support plate.

Claims

1. A method for manufacturing a semiconductor, comprising the steps of:

preparing a hot plate which heats a sapphire substrate, a support table having a support plate and support portions and disposed with being spaced away from the hot plate by a predetermined interval, and an elevating device which moves up and down the support table;

disposing the sapphire substrate through the support portions with being respectively spaced between the hot plate and the support table by a predetermined interval and disposing the sapphire substrate in such a manner that back surfaces of the hot plate and the sapphire substrate are opposite to each other;

externally blocking off spacing defined between the hot plate and the sapphire substrate and spacing defined between the sapphire substrate and the support table;

after the blocking off thereof from outside, heating up the hot plate to thereby heat up the sapphire substrate; and

elevating the support table by the elevating device to bring the back surface of the heated-up sapphire substrate into contact with the hot plate.

2. The method according to claim 1, wherein the predetermined interval defined between the sapphire substrate and the hot plate is set to a range from over 1 mm to under 5 mm.

3. The method according to claim 1, wherein the step for externally blocking off the spacing defined between the hot plate and the sapphire substrate and the spacing defined between the sapphire substrate and the support table is performed by providing a shielding cover whose inner faces are mirror surfaces.

4. The method according to claim 3, wherein the predetermined interval defined between the sapphire substrate and the hot plate is set to a range from over 1 mm to under 5 mm.

5. A method for manufacturing a semiconductor, comprising the steps of:

preparing a hot plate which heats a sapphire substrate, a support table having a support plate and support portions and disposed with being spaced away from the hot plate by a predetermined interval, a preheat plate disposed over the support table with being spaced away from the hot plate by a predetermined interval, and an elevating device which moves up and down the support table;

disposing the sapphire substrate through the support portions with being respectively spaced between the hot plate and the preheat plate by a predetermined interval and disposing the sapphire substrate in such a manner that back surfaces of the hot plate and the sapphire substrate and front surfaces of the preheat plate and the sapphire substrate are respectively opposite to one another;

heating up the hot plate and the preheat plate to thereby heat up the sapphire substrate; and

elevating the support table by the elevating device to bring the back surface of the heated-up sapphire substrate into contact with the hot plate.

6. The method according to claim 5, wherein the step for heating up the sapphire substrate is performed with a set temperature of the preheat plate being set to the same degree as a set temperature of the hot plate.

7. A method for manufacturing a semiconductor, comprising the steps of:

preparing a sapphire substrate, a hot plate set to a temperature of 300°

C. or higher, and a preheat plate set to a temperature exceeding the set temperature of the hot plate;

placing the sapphire substrate over the preheat plate to heat up the sapphire substrate; and

transferring the heated-up sapphire substrate from the preheat plate to the hot plate to thereby cool down the sapphire substrate.

8. The method according to claim 7, wherein the set temperature of the preheat plate is a temperature set higher by 80°

C. or more than the set temperature of the hot plate.

9. A method for manufacturing a semiconductor, comprising the steps of:

preparing a sapphire substrate, and a hot plate which is placed over the sapphire substrate and at which process work is performed at a set temperature greater than or equal to 300°

C.;

setting the hot plate to a temperature exceeding the set temperature;

placing the sapphire substrate over the hot plate set to the temperature exceeding the set temperature; and

cooling the hot plate down to the set temperature to thereby cool down the sapphire substrate.

10. The method according to claim 9, wherein the temperature exceeding the set temperature is a temperature set higher by 80°

C. or above than the set temperature.

11. The method according to claim 9, wherein the step for setting the hot plate to the temperature exceeding the set temperature is performed by heating of lamps.

12. The method according to claim 11, wherein the temperature exceeding the set temperature is a temperature set higher by 80°

C. or above than the set temperature.