Technique for manufacturing silicon structures
First Claim
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1. A method for manufacturing silicon structures, comprising the steps of:
- etching a cavity into a first side of an epitaxial wafer, wherein a thickness of an epitaxial layer is selected based on a desired depth of the etched cavity and a desired membrane thickness;
bonding the first side of the epitaxial wafer to a first side of a handle wafer;
removing a desired portion of the epitaxial wafer to provide the epitaxial layer; and
forming desired circuitry on a second side of the epitaxial layer, wherein the second side of the epitaxial layer is opposite the first side of the epitaxial wafer.
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Abstract
A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded to a first side of a handle wafer. After thinning the epitaxial wafer until only the epitaxial layer remains, desired circuitry is formed on a second side of the remaining epitaxial layer, which is opposite the first side of the epitaxial wafer.
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Citations
21 Claims
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1. A method for manufacturing silicon structures, comprising the steps of:
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etching a cavity into a first side of an epitaxial wafer, wherein a thickness of an epitaxial layer is selected based on a desired depth of the etched cavity and a desired membrane thickness;
bonding the first side of the epitaxial wafer to a first side of a handle wafer;
removing a desired portion of the epitaxial wafer to provide the epitaxial layer; and
forming desired circuitry on a second side of the epitaxial layer, wherein the second side of the epitaxial layer is opposite the first side of the epitaxial wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 13, 14, 15)
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10. A method for manufacturing silicon structures, comprising the steps of:
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providing an epitaxial wafer including a buried etch stop layer positioned at a desired depth in the epitaxial wafer;
etching a cavity into a first side of the epitaxial wafer, wherein a thickness of an epitaxial layer is selected based on a desired depth of the etched cavity and a membrane thickness, and wherein the membrane thickness is the difference between the location of the buried etch stop layer and the depth of the etched cavity;
bonding the first side of the epitaxial wafer to a first side of a handle wafer;
removing a portion of the epitaxial wafer from a second side of the epitaxial wafer until the buried etch stop layer is exposed, wherein the second side of the epitaxial wafer is opposite the first side of the epitaxial wafer;
removing the etch stop layer from the epitaxial layer; and
forming desired circuitry on the second side of the epitaxial layer. - View Dependent Claims (12, 16, 17, 19, 21)
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18. A method for manufacturing silicon structures, comprising the steps of:
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etching a cavity into a first side of an epitaxial wafer, wherein a thickness of the epitaxial layer is selected based on a desired depth of the etched cavity and a desired membrane thickness;
bonding the first side of the epitaxial wafer to a first side of a handle wafer;
thinning the epitaxial wafer until only an epitaxial layer remains; and
forming desired circuitry on a second side of the epitaxial layer, wherein the second side of the epitaxial layer is opposite the first side of the epitaxial wafer, and wherein the epitaxial layer is an N-type silicon layer and the buried etch stop layer is a P-type++ layer, where the handle wafer is at least one of a P-type++ silicon wafer or a silicon wafer having a (111) Miller Indices. - View Dependent Claims (20)
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Specification