Method to perform selective atomic layer deposition of zinc oxide

• US 20060240662A1
• Filed: 04/25/2005
• Published: 10/26/2006
• Est. Priority Date: 04/25/2005
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Laboratories of America Incorporated (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ono, Yoshi, Evans, David R., Conley, John F. Jr.
• Granted Patent: US 7,160,819 B2
• Time in Patent Office: Days
• US Class Current: 438/625
• CPC Class Codes: C23C 16/042 using masks
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02334 in-situ cleaning after layer formation, e.g. removing process residues
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]

Abstract

A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H₂O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.

Claims

1. A method for selective ALD of ZnO on a wafer, comprising:

preparing a silicon wafer;

patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited;

depositing a layer of ZnO on the wafer by ALD; and

removing the blocking agent from the wafer.

2. The method of claim 1 wherein said preparing a silicon wafer includes preparing a silicon wafer by dipping in an HF dip, preparing a silicon substrate having a SiO₂ layer thereon;

and preparing a silicon substrate having a Si₃N₄ layer thereon.

3. The method of claim 1 wherein the blocking agent is taken from a group of blocking agents consisting of isopropyl alcohol, acetone and deionized water.

4. The method of claim 3 wherein the blocking agent is applied by mechanical swiping of the blocking agent on the selected regions of the silicon wafer.

5. The method of claim 1 wherein said depositing a layer of ZnO on the wafer by ALD includes performing atomic layer deposition using diethyl zinc and H₂O at a temperature of between about 140°

C. to 170°

C.

6. The method of claim 1 wherein said removing the blocking agent includes removing the blocking agent by oxygen plasma treatment.

7. A method for selective ALD of ZnO on a wafer, comprising:

preparing a silicon wafer;

patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents consisting of isopropyl alcohol, acetone and deionized water;

depositing a layer of ZnO on the wafer by ALD; and

removing the blocking agent from the wafer.

8. The method of claim 7 wherein said preparing a silicon wafer includes preparing a silicon wafer by dipping in an HF dip, preparing a silicon substrate having a SiO₂ layer thereon;

and preparing a silicon substrate having a Si₃N₄ layer thereon.

9. The method of claim 8 wherein the blocking agent is applied by mechanical swiping of the blocking agent on the selected regions of the silicon wafer.

10. The method of claim 7 wherein said depositing a layer of ZnO on the wafer by ALD includes performing atomic layer deposition using diethyl zinc and H₂O at a temperature of between about 140°

C. to 170°

C.

11. The method of claim 7 wherein said removing the blocking agent includes removing the blocking agent by oxygen plasma treatment.

12. A method for selective ALD of ZnO on a wafer, comprising:

preparing a silicon wafer;

patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited;

depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H₂O at a temperature of between about 140°

C. to 170°

C.; and

removing the blocking agent from the wafer by oxygen plasma treatment.

13. The method of claim 12 wherein said preparing a silicon wafer includes preparing a silicon wafer by dipping in an HF dip, preparing a silicon substrate having a SiO₂ layer thereon;

and preparing a silicon substrate having a Si₃N₄ layer thereon.

14. The method of claim 13 wherein the blocking agent is applied by mechanical swiping of the blocking agent on the selected regions of the silicon wafer.

15. The method of claim 12 wherein the blocking agent is taken from a group of blocking agents consisting of isopropyl alcohol, acetone and deionized water.